MTB60N06HD Datasheet, PDF (3/11 Pages) Motorola, Inc – TMOS POWER FET 60 AMPERES 60 VOLTS

MTB60N06HD
TYPICAL ELECTRICAL CHARACTERISTICS
120
V_GS = 10 V
100
80
8V
9V
7V
T_J = 25°C
120
V_DS ≥ 10 V
100
80
60
6V
60
40
20
5V
0
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
V_DS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 1. On−Region Characteristics
40
20
100°C
25°C
T_J = − 55°C
0
2.0 2.8
3.6 4.4
5.2
6.0 6.8
7.6
V_GS, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
0.020
0.018
V_GS = 10 V
0.016
T_J = 100°C
0.014
0.012
25°C
0.010
0.008
− 55°C
0.006
0 10 20 30 40 50 60 70 80 90 100 110 120
I_D, DRAIN CURRENT (AMPS)
Figure 3. On−Resistance versus Drain Current
and Temperature
0.0132
0.0128
T_J = 25°C
0.0124
0.0120
0.0116
V_GS = 10 V
0.0112
0.0108
15 V
0.0104
0.0100
0
10 20
30 40 50 60 70 80 90 100 110 120
I_D, DRAIN CURRENT (AMPS)
Figure 4. On−Resistance versus Drain Current
and Gate Voltage
1.8
V_GS = 10 V
1.6 ^ID ^{= 30 A}
1.4
1.2
1.0
1000
V_GS = 0 V
100
10
T_J = 125°C
100°C
25°C
0.8
0.6
− 50 − 25
0 25 50 75 100
T_J, JUNCTION TEMPERATURE (°C)
125 150
Figure 5. On−Resistance Variation with
Temperature
1
0
10
20
30
40
50
60
V_DS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 6. Drain−to−Source Leakage
Current versus Voltage
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