MTB60N06HD Datasheet, PDF (2/11 Pages) Motorola, Inc – TMOS POWER FET 60 AMPERES 60 VOLTS

MTB60N06HD
ELECTRICAL CHARACTERISTICS (T_J = 25°C unless otherwise noted)
Characteristic
Symbol
Min
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
(V_GS = 0 Vdc, I_D = 250 μAdc)
Temperature Coefficient (Positive)
(C_pk ≥ 2.0) (Note 4)
V_(BR)DSS
60
−
Zero Gate Voltage Drain Current
(V_DS = 60 Vdc, V_GS = 0 Vdc)
(V_DS = 60 Vdc, V_GS = 0 Vdc, T_J = 125°C)
Gate−Body Leakage Current
(V_GS = ± 20 Vdc, V_DS = 0 Vdc)
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
(V_DS = V_GS, I_D = 250 μAdc)
Threshold Temperature Coefficient (Negative)
(C_pk ≥ 3.0) (Note 4)
I_DSS
−
−
I_GSS
−
V_GS(th)
2.0
−
Static Drain−Source On−Resistance
(V_GS = 10 Vdc, I_D = 30 Adc)
(C_pk ≥ 3.0) (Note 4)
Drain−Source On−Voltage (V_GS = 10 Vdc)
(I_D = 60 Adc)
(I_D = 30 Adc, T_J =125°C)
Forward Transconductance
(V_DS = 4.0 Vdc, I_D = 30 Adc)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Transfer Capacitance
(V_DS = 25 Vdc, V_GS = 0 Vdc,
f = 1.0 MHz)
SWITCHING CHARACTERISTICS (Note 3)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
(V_DD= 30 Vdc, I_D = 60 Adc,
V_GS = 10 Vdc,
R_G = 9.1 Ω)
Gate Charge
(See Figure 8)
(V_DS = 48 Vdc, I_D = 60 Adc,
V_GS = 10 Vdc)
SOURCE−DRAIN DIODE CHARACTERISTICS
Forward On−Voltage
(I_S = 60 Adc, V_GS = 0 Vdc)
(I_S = 60 Adc, V_GS = 0 Vdc,
T_J = 125°C)
Reverse Recovery Time
(See Figure 15)
(I_S = 60 Adc, V_GS = 0 Vdc,
dI_S/dt = 100 A/μs)
Reverse Recovery Stored Charge
INTERNAL PACKAGE INDUCTANCE
Internal Drain Inductance
(Measured from the drain lead 0.25″ from package to center of die)
R_DS(on)
−
V_DS(on)
−
−
g_FS
15
C_iss
−
C_oss
−
C_rss
−
t_d(on)
−
t_r
−
t_d(off)
−
t_f
−
Q_T
−
Q₁
−
Q₂
−
Q₃
−
V_SD
−
−
t_rr
−
t_a
−
t_b
−
Q_RR
−
L_D
−
Internal Source Inductance
L_S
−
(Measured from the source lead 0.25″ from package to source bond pad)
2. Pulse Test: Pulse Width ≤ 300 μs, Duty Cycle ≤ 2%.
3. Switching characteristics are independent of operating junction temperature.
4. Reflects typical values.
Max limit − Typ
C_pk =
3 x SIGMA
Typ
Max
Unit
Vdc
−
−
71
−
mV/°C
μAdc
−
10
−
100
nAdc
−
100
3.0
7.0
0.011
−
−
20
4.0
−
0.014
1.0
0.9
−
Vdc
mV/°C
Ohm
Vdc
mhos
1950
2800
pF
660
920
147
300
14
26
ns
197
394
50
102
124
246
51
71
nC
12
−
24
−
21
−
Vdc
0.99
1.0
0.89
−
60
−
ns
36
−
24
−
0.143
−
μC
4.5
−
nH
7.5
−
nH
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