MSD1819A-RT1G Datasheet, PDF (3/4 Pages) ON Semiconductor – General Purpose Amplifier Transistor

MSD1819A−RT1G, NSVMSD1819A−RT1G
1.0
0.9
−55°C
0.8
0.7
25°C
0.6
0.5
150°C
0.4
0.3
0.2
0.0001 0.001
0.01
0.1
1
I_C, COLLECTOR CURRENT (A)
Figure 5. Base Emitter Turn−On Voltage vs.
Collector Current
18
17
16
15
14
13
C_ibo (pF)
12
11
10
9
8
7
0
1
2
3
4
5
6
V_eb, EMITTER BASE VOLTAGE (V)
Figure 7. Input Capacitance
1.2
1 mA
T_A = 25°C
1.0
10 mA 50 mA
I_C = 100 mA
0.8
0.6
0.4
0.2
0 ^{500 mA}
0.000001 0.00001 0.0001
0.001
0.01
I_B, BASE CURRENT (A)
Figure 6. Collector Saturation Region
6.0
5.5
5.0
4.5
4.0
3.5 ^Cobo ^(pF)
3.0
2.5
2.0
1.5
1.0
0 5 10 15 20 25 30 35 40
V_cb, COLLECTOR BASE VOLTAGE (V)
Figure 8. Output Capacitance
1
1.0 ms
100 ms
0.1
10 ms
1.0 s
0.01
1
10
100
V_CE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 9. Safe Operating Area
www.onsemi.com
3