MSD1819A-RT1G Datasheet, PDF (2/4 Pages) ON Semiconductor – General Purpose Amplifier Transistor

MSD1819A−RT1G, NSVMSD1819A−RT1G
ELECTRICAL CHARACTERISTICS
Characteristic
Symbol
Min
Max
Unit
Collector-Emitter Breakdown Voltage (I_C = 2.0 mAdc, I_B = 0)
V_(BR)CEO
50
−
Vdc
Collector-Base Breakdown Voltage (I_C = 10 mAdc, I_E = 0)
V_(BR)CBO
60
−
Vdc
Emitter-Base Breakdown Voltage (I_E = 10 mAdc, I_E = 0)
V_(BR)EBO
7.0
−
Vdc
Collector-Base Cutoff Current (V_CB = 20 Vdc, I_E = 0)
I_CBO
−
0.1
mA
Collector-Emitter Cutoff Current (V_CE = 10 Vdc, I_B = 0)
I_CEO
−
0.1
mA
DC Current Gain (Note 2)
(V_CE = 10 Vdc, I_C = 2.0 mAdc)
(V_CE = 2.0 Vdc, I_C = 100 mAdc)
−
h_FE1
210
340
h_FE2
90
−
Collector-Emitter Saturation Voltage (Note 2)
(I_C = 100 mAdc, I_B = 10 mAdc)
V_CE(sat)
−
Vdc
0.5
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Pulse Test: Pulse Width ≤ 300 ms, D.C. ≤ 2%.
250
200
150
100
50
R_qJA = 833°C/W
0
−50
0
50
100
150
T_A, AMBIENT TEMPERATURE (°C)
Figure 1. Derating Curve
450
150°C (10 V)
400
350
150°C (2 V)
300
25°C (10 V)
250
25°C (2 V)
200
−55°C (10 V)
150
−55°C (2 V)
100
50
0
0.0001 0.001
0.01
0.1
1
I_C, COLLECTOR CURRENT (A)
Figure 3. DC Current Gain vs. Collector
Current
0.30
0.25
I_C/I_B = 10
0.20
150°C
0.15
0.10
25°C
−55°C
0.05
0
0.0001 0.001
0.01
0.1
1
I_C, COLLECTOR CURRENT (A)
Figure 2. Collector Emitter Saturation Voltage
vs. Collector Current
0.95 I_C/I_B = 10
0.85
0.75
−55°C
25°C
0.65
150°C
0.55
0.45
0.35
0.25
0.0001 0.001
0.01
0.1
1
I_C, COLLECTOR CURRENT (A)
Figure 4. Base Emitter Saturation Voltage vs.
Collector Current
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