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| MMVL2101T1_06 Datasheet, PDF (3/4 Pages) ON Semiconductor – Silicon Tuning Diode | |||
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MMVL2101T1
TYPICAL DEVICE CHARACTERISTICS
1000
500
TA = 25°C
200
f = 1.0 MHz
100
50
20
10
5.0
2.0
1.0
0.1
0.2
0.3
0.5
1.0
2.0
3.0
5.0
10
VR, REVERSE VOLTAGE (VOLTS)
Figure 1. Diode Capacitance versus Reverse Voltage
20
30
1.040
1.030
VR = 2.0 Vdc
1.020
1.010
VR = 4.0 Vdc
1.000
0.990
0.980
0.970
VR = 30 Vdc
NORMALIZED TO CT
at TA = 25°C
VR = (CURVE)
0.960
â75 â50 â25 0 +25 +50 +75 +100 +125
TJ, JUNCTION TEMPERATURE (°C)
Figure 2. Normalized Diode Capacitance versus
Junction Temperature
100
50
TA = 125°C
20
10
5.0
2.0
TA = 75°C
1.0
0.50
0.20
TA = 25°C
0.10
0.05
0.02
0.01 0
5.0
10
15
20
25
30
VR, REVERSE VOLTAGE (VOLTS)
Figure 3. Reverse Current versus Reverse Bias
Voltage
5000
3000
2000
1000
500
300
200
100
50
30
20
TA = 25°C
f = 50 MHz
10
1.0
2.0 3.0
5.0 7.0 10
20 30
VR, REVERSE VOLTAGE (VOLTS)
Figure 4. Figure of Merit versus Reverse Voltage
5000
3000
2000
1000
500
300
200
100
50
30
20
TA = 25°C
VR = 4.0 Vdc
10
10
20
30
50 70 100
f, FREQUENCY (MHz)
200 250
Figure 5. Figure of Merit versus Frequency
http://onsemi.com
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