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| MMVL2101T1_06 Datasheet, PDF (2/4 Pages) ON Semiconductor – Silicon Tuning Diode | |||
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MMVL2101T1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Reverse Breakdown Voltage
(IR = 10 mAdc)
V(BR)R
30
â
â
Vdc
Reverse Voltage Leakage Current
(VR = 25 Vdc, TA = 25°C)
IR
â
â
0.1
mAdc
Diode Capacitance Temperature Coefficient
(VR = 4.0 Vdc, f = 1.0 MHz)
TCC
â
280
â
ppm/°C
Device
MMVL2101T1
CT, Diode Capacitance
VR = 4.0 Vdc, f = 1.0 MHz
pF
Min
Nom
Max
6.1
6.8
7.5
Q, Figure of Merit
VR = 4.0 Vdc,
f = 50 MHz
Typ
450
TR, Tuning Ratio
C2/C30
f = 1.0 MHz
Min
Typ
Max
2.5
2.7
3.2
PARAMETER TEST METHODS
1. CT, DIODE CAPACITANCE
(CT = CC + CJ). CT is measured at 1.0 MHz using a
capacitance bridge (Boonton Electronics Model 75A or
equivalent).
2. TR, TUNING RATIO
TR is the ratio of CT measured at 2.0 Vdc divided by CT
measured at 30 Vdc.
3. Q, FIGURE OF MERIT
Q is calculated by taking the G and C readings of an
admittance bridge at the specified frequency and
substituting in the following equations:
Q
+
2pfC
G
(Boonton Electronics Model 33AS8 or equivalent). Use
Lead Length [ 1/16â.
4. TCC, DIODE CAPACITANCE TEMPERATURE
COEFFICIENT
TCC is guaranteed by comparing CT at VR = 4.0 Vdc,
f = 1.0 MHz, TA = â65°C with CT at VR = 4.0 Vdc,
f = 1.0 MHz, TA = +85°C in the following equation,
which defines TCC:
Ť Ť TCC +
CT() 85°C) â CT(â65°C)
85 ) 65
·
106
CT(25°C)
Accuracy limited by measurement of CT to ±0.1 pF.
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