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MMUN2217L_16 Datasheet, PDF (3/5 Pages) ON Semiconductor – Digital Transistors (BRT)
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MMUN2217L, NSVMMUN2217L
Table 3. ELECTRICAL CHARACTERISTICS (TA = 25°C, unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max Unit
OFF CHARACTERISTICS
Collector−Base Cutoff Current
(VCB = 50 V, IE = 0)
ICBO
nAdc
−
−
100
Collector−Emitter Cutoff Current
(VCE = 50 V, IB = 0)
ICEO
nAdc
−
−
500
Emitter−Base Cutoff Current
(VEB = 6.0 V, IC = 0)
IEBO
mAdc
−
−
0.5
Collector−Base Breakdown Voltage
(IC = 10 mA, IE = 0)
V(BR)CBO
50
−
Vdc
−
Collector−Emitter Breakdown Voltage (Note 3)
(IC = 2.0 mA, IB = 0)
V(BR)CEO
50
−
Vdc
−
ON CHARACTERISTICS
DC Current Gain (Note 3)
(IC = 5.0 mA, VCE = 10 V)
hFE
35
60
−
Collector *Emitter Saturation Voltage (Note 3)
(IC = 10 mA, IB = 1.0 mA)
VCE(sat)
Vdc
−
−
0.25
Input Voltage (off)
(VCE = 5.0 V, IC = 100 mA)
Vi(off)
Vdc
−
0.9
0.3
Input Voltage (on)
(VCE = 0.3 V, IC = 20 mA)
Vi(on)
Vdc
2.5
2.0
−
Output Voltage (on)
(VCC = 5.0 V, VB = 2.5 V, RL = 1.0 kW)
Output Voltage (off)
(VCC = 5.0 V, VB = 0.5 V, RL = 1.0 kW)
VOL
Vdc
−
−
0.2
VOH
Vdc
4.9
−
−
Input Resistor
R1
3.3
4.7
6.1
kW
Resistor Ratio
R1/R2
0.38 0.47 0.56
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle v 2%.
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