MMUN2217L_16 Datasheet, PDF (1/5 Pages) ON Semiconductor – Digital Transistors (BRT)

MMUN2217L,
NSVMMUN2217L
Digital Transistors (BRT)
R1 = 4.7 kW, R2 = 10 kW
NPN Transistors with Monolithic Bias
Resistor Network
This series of digital transistors is designed to replace a single
device and its external resistor bias network. The Bias Resistor
Transistor (BRT) contains a single transistor with a monolithic bias
network consisting of two resistors; a series base resistor and a
base−emitter resistor. The BRT eliminates these individual
components by integrating them into a single device. The use of a BRT
can reduce both system cost and board space.
Features
• Simplifies Circuit Design
• Reduces Board Space
• Reduces Component Count
• NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (T_A = 25°C)
Rating
Symbol
Max
Unit
Collector−Base Voltage
V_CBO
50
Vdc
Collector−Emitter Voltage
V_CEO
50
Vdc
Collector Current − Continuous
I_C
100
mAdc
Input Forward Voltage
V_IN(fwd)
20
Vdc
Input Reverse Voltage
V_IN(rev)
7
Vdc
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
www.onsemi.com
PIN CONNECTIONS
PIN 3
COLLECTOR
PIN 1
R1
BASE
(OUTPUT)
(INPUT) _R2
PIN 2
EMITTER
(GROUND)
MARKING DIAGRAM
AAM MG
G
1
SOT−23
CASE 318
STYLE 6
AAM
M
G
Specific Device Code
= Date Code*
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending up-
on manufacturing location.
ORDERING INFORMATION
See detailed ordering, marking, and shipping information in
the package dimensions section on page 2 of this data sheet.
© Semiconductor Components Industries, LLC, 2016
1
October, 2016 − Rev. 3
Publication Order Number:
DTC143X/D