MMDF6N03HDR2 Datasheet, PDF (3/10 Pages) ON Semiconductor – Power MOSFET 6 Amps, 30 Volts

MMDF6N03HD
TYPICAL ELECTRICAL CHARACTERISTICS
12
10 V
10 ^{6.0 V}
4.5 V
8.0 ^{4.3 V}
4.1 V
3.9 V _{3.7 V}
T_J = 25°C
3.5 V
12
10
V_DS ≥ 10 V
8.0
6.0
3.3 V
6.0
100°C
25°C
4.0
3.1 V
4.0
2.0
2.9 V
V_GS = 2.5 V
2.7 V
2.0
T_J = −55°C
0
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
V_DS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
V_GS, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
0.30
0.25
T_J = 25°C
I_D = 6 A
0.20
0.15
0.10
0.05
0.050
0.045
T_J = 25°C
0.040
0.035
0.030
V_GS = 4.5 V
10 V
0
2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10
V_GS, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 3. On−Resistance versus
Gate−To−Source Voltage
0.025
1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0
I_D, DRAIN CURRENT (AMPS)
Figure 4. On−Resistance versus Drain Current
and Gate Voltage
1.8
1.6
V_GS = 10 V
1.4
I_D = 3 A
1.2
1000
V_GS = 0 V
100
T_J = 125°C
1.0
100°C
10
0.8
0.6
0.4
1.0
25°C
0.2
0
0.1
−50 −25 0 25 50 75 100 125 150
0
T_J, JUNCTION TEMPERATURE (°C)
5.0
10
15
20
25
30
V_DS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−To−Source Leakage
Current versus Voltage
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