MMDF4207 Datasheet, PDF (3/11 Pages) ON Semiconductor – Dual P-Channel Field Effect Transistors

MMDF4207
ELECTRICAL CHARACTERISTICS (T_C = 25°C unless otherwise noted)
Characteristic
Symbol
Min
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage⁽¹⁾
(V_GS = 0 Vdc, I_D = 0.25 mAdc)
Temperature Coefficient (Positive)
V_(BR)DSS
20
−
Zero Gate Voltage Drain Current
(V_DS = 20 Vdc, V_GS = 0 Vdc)
(V_DS = 20 Vdc, V_GS = 0 Vdc, T_J = 55°C)
Gate−Body Leakage Current (V_GS = ± 12 Vdc, V_DS = 0 Vdc)
ON CHARACTERISTICS⁽¹⁾
Gate Threshold Voltage⁽¹⁾
(V_DS = V_GS, I_D = 0.25 mAdc)
Threshold Temperature Coefficient (Negative)
Static Drain−to−Source On−Resistance⁽¹⁾
(V_GS = 4.5 Vdc, I_D = 6.2 Adc)
(V_GS = 2.5 Vdc, I_D = 5.0 Adc)
Forward Transconductance (V_DS = 10 Vdc, I_D = 6.2 Adc)⁽¹⁾
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Transfer Capacitance
(V_DS = 15 Vdc, V_GS = 0 V,
f = 1.0 MHz)
SWITCHING CHARACTERISTICS⁽²⁾
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
(V_DS = 10 Vdc, I_D = 1.0 Adc,
V_GS = 10 Vdc,
R_G = 6.0 Ω)⁽¹⁾
Gate Charge
(V_DS = 10 Vdc, I_D = 6.2 Adc,
V_GS = 4.5 Vdc)⁽¹⁾
I_DSS
−
−
I_GSS
−
V_GS(th)
0.6
−
R_DS(on)
−
−
g_FS
−
C_iss
−
C_oss
−
C_rss
−
t_d(on)
−
t_r
−
t_d(off)
−
t_f
−
Q_T
−
Q₁
−
Q₂
−
Q₃
−
SOURCE−DRAIN DIODE CHARACTERISTICS
Forward On−Voltage
(I_S = 1.7 Adc, V_GS = 0 Vdc)⁽¹⁾
V_SD
−
(I_S = 1.7 Adc, V_GS = 0 Vdc, T_J = 125°C)
−
Reverse Recovery Time
t_rr
−
Reverse Recovery Stored
Charge
(I_S = 1.7 Adc, V_GS = 0 Vdc,
dI_S/dt = 100 A/μs)⁽¹⁾
t_a
−
t_b
−
Q_RR
−
(1) Pulse Test: Pulse Width ≤ 300 μs, Duty Cycle ≤ 2%.
(2) Switching characteristics are independent of operating junction temperatures.
(3) Repetitive rating; pulse width limited by max. junction temperature.
Typ
Max
Unit
Vdc
−
−
14.9
−
mV/°C
μAdc
−
1.0
−
5.0
−
100
nAdc
Vdc
−
−
−2.6
−
mV/°C
mΩ
22
33
34
50
15
−
Mhos
1210
1694
pF
560
784
340
476
14
21
ns
20
64
68
74
84
127
27
31
nC
4.5
−
11.7
−
9.3
−
0.87
1.2
Vdc
0.72
−
43
80
ns
20
−
23
−
0.04
−
μC
http://onsemi.com
3