MMDF4207 Datasheet, PDF (1/11 Pages) ON Semiconductor – Dual P-Channel Field Effect Transistors

MMDF4207
Dual P-Channel
Field Effect Transistors
Medium Power Surface Mount Products
These devices are an advanced series of power MOSFETs which
utilize ON Semiconductor’s latest MOSFET technology process to
achieve the lowest possible on−resistance per silicon area. They are
capable of withstanding high energy in the avalanche and
commutation modes and the drain−to−source diode has a very low
reverse recovery time. These devices are designed for use in low
voltage, high speed switching applications where power efficiency is
important. Typical applications are dc−dc converters, and power
management in portable and battery powered products such as
computers, printers, cellular and cordless phones. They can also be
used for low voltage motor controls in mass storage products such as
disk drives and tape drives. The avalanche energy is specified to
eliminate the guesswork in designs where inductive loads are switched
and offer additional safety margin against unexpected voltage
transients.
• Ultra Low R_DS(on) Provides Higher Efficiency and
Extends Battery Life in Portable Applications
• Characterized Over a Wide Range of Power Ratings
• Logic Level Gate Drive − Can Be Driven by
Logic ICs
• Diode Is Characterized for Use In Bridge Circuits
• Diode Exhibits High Speed, with Soft Recovery
• I_DSS Specified at Elevated Temperature
• Miniature SO−8 Surface Mount Package −
Saves Board Space
http://onsemi.com
DUAL POWER MOSFET
6.2 AMPERES
20 VOLTS
R_DS(on) = 0.033 Ω
D
G
S
8
1
SO−8
CASE 751
STYLE 11
SOURCE 1
GATE 1
SOURCE 2
GATE 2
18
27
36
45
TOP VIEW
DRAIN 1
DRAIN 1
DRAIN 2
DRAIN 2
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 10 of this data sheet.
© Semiconductor Components Industries, LLC, 2013
1
May, 2013 − Rev. 3
Publication Order Number:
MMDF4207/D