MMDF3N04HD Datasheet, PDF (3/12 Pages) Motorola, Inc – DUAL TMOS POWER MOSFET 3.4 AMPERES 40 VOLTS

MMDF3N04HD
ELECTRICAL CHARACTERISTICS (T_C = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
(V_GS = 0 Vdc, I_D = 0.25 mAdc)
Temperature Coefficient (Positive)
(Cpk ≥ 2.0) (Notes 4 & 6)
Zero Gate Voltage Drain Current
(V_DS = 40 Vdc, V_GS = 0 Vdc)
(V_DS = 40 Vdc, V_GS = 0 Vdc, T_J = 125°C)
Gate−Body Leakage Current (V_GS = ± 20 Vdc, V_DS = 0)
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage
(Cpk ≥ 2.0) (Notes 4 & 6)
(V_DS = V_GS, I_D = 0.25 mAdc)
Threshold Temperature Coefficient (Negative)
Static Drain−to−Source On−Resistance
(V_GS = 10 Vdc, I_D = 3.4 Adc)
(V_GS = 4.5 Vdc, I_D = 1.7 Adc)
(Cpk ≥ 2.0) (Notes 4 & 6)
Forward Transconductance (V_DS = 3.0 Vdc, I_D = 1.7 Adc)
(Note 4)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Transfer Capacitance
(V_DS = 32 Vdc, V_GS = 0 Vdc,
f = 1.0 MHz)
SWITCHING CHARACTERISTICS (Note 5)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
(V_DD = 20 Vdc, I_D = 3.4 Adc,
V_GS = 10 Vdc, R_G = 6 W) (Note 4)
Fall Time
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
(V_DD = 20 Vdc, I_D = 1.7 Adc,
V_GS = 4.5 Vdc, R_G = 6 W) (Note 4)
Fall Time
Gate Charge
(V_DS = 40 Vdc, I_D = 3.4 Adc,
V_GS = 10 Vdc) (Note 4)
SOURCE−DRAIN DIODE CHARACTERISTICS
Forward On−Voltage
(I_S = 3.4 Adc, V_GS = 0 Vdc) (Note 4)
(I_S = 3.4 Adc, V_GS = 0 Vdc,
T_J = 125°C)
Reverse Recovery Time
(I_S = 3.4 Adc, V_GS = 0 Vdc,
dI_S/dt = 100 A/ms) (Note 4)
Reverse Recovery Storage Charge
4. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
5. Switching characteristics are independent of operating junction temperature.
6. Reflects typical values.
Max limit − Typ
C_pk =
3 x SIGMA
Symbol
V_(BR)DSS
I_DSS
I_GSS
V_GS(th)
R_DS(on)
g_FS
C_iss
C_oss
C_rss
t_d(on)
t_r
t_d(off)
t_f
t_d(on)
t_r
t_d(off)
t_f
Q_T
Q₁
Q₂
Q₃
V_SD
t_rr
t_a
t_b
Q_RR
Min
Typ
Max
Unit
40
−
−
4.3
Vdc
−
−
mV/°C
mAdc
−
0.015
2.5
−
0.15
10
−
0.013
500
nAdc
Vdc
1.0
2.0
3.0
−
4.9
−
mV/°C
mW
−
55
80
−
79
100
2.0
4.5
−
Mhos
−
450
900
pF
−
130
230
−
32
96
−
9.0
18
ns
−
15
30
−
28
56
−
19
38
−
13
26
ns
−
77
144
−
17
34
−
20
40
−
13.9
28
nC
−
2.1
−
−
3.7
−
−
5.4
−
Vdc
−
0.87
1.5
−
0.8
−
−
27
−
ns
−
20
−
−
7.0
−
−
0.03
−
mC
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