MMDF3N03HD Datasheet, PDF (3/12 Pages) Motorola, Inc – DUAL TMOS POWER MOSFET 4.1 AMPERES 30 VOLTS

MMDF3N03HD
TYPICAL ELECTRICAL CHARACTERISTICS
6 _{VGS = 10 V}
5 ^{4.5 V}
4.3 V
4 ^{4.1 V}
3.9 V
3.7 V
3.5 V
3.3 V
TJ = 25°C
3
3.1 V
2
2.9 V
1
0
0 0.2 0.4 0.6 0.8
2.7 V
2.5 V
1 1.2 1.4 1.6 1.8 2
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 1. On–Region Characteristics
0.6
ID = 1.5 A
0.5
TJ = 25°C
0.4
0.3
0.2
0.1
0
2
3
4
5
6
7
8
9 10
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
Figure 3. On–Resistance versus
Gate–to–Source Voltage
6
VDS ≥ 10 V
5
4
100°C
3
2
25°C
1
TJ = -55°C
0
2
2.5
3
3.5
4
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
0.08
TJ = 25°C
0.07
VGS = 4.5
0.06
10 V
0.05
0
0.5
1
1.5
2
2.5
3
ID, DRAIN CURRENT (AMPS)
Figure 4. On–Resistance versus Drain Current
and Gate Voltage
2.0
VGS = 10 V
ID = 1.5 A
1.5
100
VGS = 0 V
TJ = 125°C
1.0
10
100°C
0.5
0
-ā50 -ā25
0
25 50 75 100
TJ, JUNCTION TEMPERATURE (°C)
125 150
Figure 5. On–Resistance Variation
with Temperature
1
0
5
10
15
20
25
30
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 6. Drain–to–Source Leakage Current
versus Voltage
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