MMDF3N03HD Datasheet, PDF (2/12 Pages) Motorola, Inc – DUAL TMOS POWER MOSFET 4.1 AMPERES 30 VOLTS

MMDF3N03HD
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–to–Source Breakdown Voltage
(VGS = 0 Vdc, ID = 250 µAdc)
Temperature Coefficient (Positive)
V(BR)DSS
30
–
–
34.5
Vdc
–
–
mV/°C
Zero Gate Voltage Drain Current
(VDS = 30 Vdc, VGS = 0 Vdc)
(VDS = 30 Vdc, VGS = 0 Vdc, TJ = 125°C)
Gate–Body Leakage Current (VGS = ± 20 Vdc, VDS = 0)
ON CHARACTERISTICS (Note 2.)
Gate Threshold Voltage
(VDS = VGS, ID = 250 µAdc)
Threshold Temperature Coefficient (Negative)
IDSS
µAdc
–
–
1.0
–
–
10
IGSS
–
–
100
nAdc
VGS(th)
Vdc
1.0
1.7
3.0
mV/°C
Static Drain–to–Source On–Resistance
(VGS = 10 Vdc, ID = 3.0 Adc)
(VGS = 4.5 Vdc, ID = 1.5 Adc)
Forward Transconductance
(VDS = 3.0 Vdc, ID = 1.5 Adc)
RDS(on)
gFS
Ohms
–
0.06
0.07
–
0.065 0.075
2.0
3.6
Mhos
–
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Transfer Capacitance
(VDS = 24 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
SWITCHING CHARACTERISTICS (Note 3.)
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time
(VDD = 15 Vdc, ID = 3.0 Adc,
VGS = 4.5 Vdc,
RG = 9.1 Ω)
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time
Gate Charge
(VDD = 15 Vdc, ID = 3.0 Adc,
VGS = 10 Vdc,
RG = 9.1 Ω)
(VDS = 10 Vdc, ID = 3.0 Adc,
VGS = 10 Vdc)
SOURCE–DRAIN DIODE CHARACTERISTICS
Forward On–Voltage (Note 2.)
(IS = 3.0 Adc, VGS = 0 Vdc)
(IS = 3.0 Adc, VGS = 0 Vdc,
TJ = 125°C)
Reverse Recovery Time
See Figure 12
(IS = 3.0 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/µs)
Reverse Recovery Storage Charge
2. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%.
3. Switching characteristics are independent of operating junction temperature.
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
td(on)
tr
td(off)
tf
QT
Q1
Q2
Q3
VSD
trr
ta
tb
QRR
–
450
630
pF
–
160
225
–
35
70
–
12
24
ns
–
65
130
–
16
32
–
19
38
–
8
16
ns
–
15
30
–
30
60
–
23
46
–
11.5
16
nC
–
1.5
–
–
3.5
–
–
2.8
–
Vdc
–
0.82
1.2
–
0.7
–
–
24
–
ns
–
17
–
–
7
–
–
0.025
–
µC
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