MMDF2P02E Datasheet, PDF (3/7 Pages) Motorola, Inc – DUAL TMOS MOSFET 2.5 AMPERES 25 VOLTS

MMDF2P02E
TYPICAL ELECTRICAL CHARACTERISTICS
4
V_GS = 10 7 V
5 V _{4.7 V}
T_J = 25°C
4.5 V
3
4.3 V
2
4.1 V
3.9 V
1
3.7 V
3.5 V
3.3 V
0
0
0.4
0.8
1.2
1.6
2
V_DS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 1. On−Region Characteristics
0.6
I_D = 1 A
0.5
T_J = 25°C
0.4
0.3
0.2
0.1
0
3
4
5
6
7
8
9
10
V_GS, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 3. On−Resistance versus
Gate−to−Source Voltage
2.0
V_GS = 10 V
I_D = 2 A
1.5
1.0
4
V_DS ≥ 10 V
3
2
1
100°C
25°C
T_J = −55°C
0
2.5
3
3.5
4
4.5
V_GS, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
0.6
T_J = 25°C
0.5
0.4
0.3
V_GS = 4.5
0.2
10 V
0.1
0
0.5
1
1.5
2
I_D, DRAIN CURRENT (AMPS)
Figure 4. On−Resistance versus Drain Current
and Gate Voltage
100
V_GS = 0 V
T_J = 125°C
10
0.5
0
−50 −25
0
25 50 75 100
T_J, JUNCTION TEMPERATURE (°C)
125 150
Figure 5. On−Resistance Variation with
Temperature
100°C
1
0
4
8
12
16
20
V_DS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 6. Drain−to−Source Leakage Current
versus Voltage
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