MMDF2P02E Datasheet, PDF (1/7 Pages) Motorola, Inc – DUAL TMOS MOSFET 2.5 AMPERES 25 VOLTS

MMDF2P02E
Power MOSFET
2 Amps, 25 Volts
P−Channel SO−8, Dual
These miniature surface mount MOSFETs feature ultra low R_DS(on)
and true logic level performance. They are capable of withstanding
high energy in the avalanche and commutation modes and the
drain−to−source diode has a low reverse recovery time. MiniMOSt
devices are designed for use in low voltage, high speed switching
applications where power efficiency is important. Typical applications
are dc−dc converters, and power management in portable and battery
powered products such as computers, printers, cellular and cordless
phones. They can also be used for low voltage motor controls in mass
storage products such as disk drives and tape drives. The avalanche
energy is specified to eliminate the guesswork in designs where
inductive loads are switched and offer additional safety margin against
unexpected voltage transients.
Features
• Ultra Low R_DS(on) Provides Higher Efficiency and Extends Battery Life
• Logic Level Gate Drive − Can Be Driven by Logic ICs
• Miniature SO−8 Surface Mount Package − Saves Board Space
• Diode Is Characterized for Use In Bridge Circuits
• Diode Exhibits High Speed, with Soft Recovery
• I_DSS Specified at Elevated Temperatures
• Avalanche Energy Specified
• Mounting Information for SO−8 Package Provided
• Pb−Free Package is Available
MAXIMUM RATINGS (T_J = 25°C unless otherwise noted) (Note 1)
Rating
Symbol Value
Unit
Drain−to−Source Voltage
Gate−to−Source Voltage − Continuous
Drain Current − Continuous @ T_A = 25°C
Drain Current − Continuous @ T_A = 100°C
Drain Current − Single Pulse (t_p ≤ 10 ms)
Total Power Dissipation @ T_A = 25°C (Note
2)
Derate above 25°C
V_DSS
V_GS
I_D
I_D
I_DM
P_D
25
Vdc
± 20
Vdc
2.5
Adc
1.7
13
Apk
2.0
W
16
mW/°C
Operating and Storage Temperature Range
Single Pulse Drain−to−Source Avalanche
Energy − Starting T_J = 25°C
(V_DD = 20 Vdc, V_GS = 10 Vdc, Peak
I_L = 7.0 Apk, L = 10 mH, R_G = 25 W)
Thermal Resistance, Junction−to−Ambient
(Note 2)
T_J, T_stg
E_AS
R_qJA
−55 to 150
245
62.5
°C
mJ
°C/W
Maximum Lead Temperature for Soldering
T_L
260
°C
Purposes, 0.0625″ from case for 10 sec.
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Negative sign for P−Channel device omitted for clarity.
2. Mounted on 2″ square FR4 board (1″ sq. 2 oz. Cu 0.06″ thick single sided) with
one die operating, 10 sec. max.
http://onsemi.com
2 AMPERES, 25 VOLTS
R_DS(on) = 250 mW
P−Channel
D
G
S
8
1
SO−8, Dual
CASE 751
STYLE 11
MARKING
DIAGRAM
8
F2PO2
AYWW G
G
1
F2P02 = Specific Device Code
A
= Assembly Location
Y
= Year
WW = Work Week
G
= Pb−Free Package
(Note: Microdot may be in either location)
PIN ASSIGNMENT
Source−1
Gate−1
Source−2
Gate−2
18
27
36
45
Top View
Drain−1
Drain−1
Drain−2
Drain−2
ORDERING INFORMATION
Device
Package
Shipping^†
MMDF2P02ER2
SO−8 2500 Tape & Reel
MMDF2P02ER2G SO−8 2500 Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2006
1
April, 2006 − Rev. 8
Publication Order Number:
MMDF2P02E/D