MMBV432LT1_06 Datasheet, PDF (3/4 Pages) ON Semiconductor – Silicon Tuning Diode

MMBV432LT1
TYPICAL CHARACTERISTICS (Each Diode)
100
550
70
450
50
350
30
f = 1.0 MHz
250
20
T_A = 25°C
150
T_A = 25°C
f = 100 MHz
10
50
1
2
3
5
7
10
0
2
4
6
8
10
V_R, REVERSE VOLTAGE (VOLTS)
V_R, REVERSE VOLTAGE (VOLTS)
Figure 1. Diode Capacitance
Figure 2. Figure of Merit versus Voltage
2000
1.06
1000
V_R = 2.0 Vdc
1.04
T_A = 25°C
500
1.02
200
1.00
100
50
0.98
V_R = 2.0 Vdc
V_R = 4.0 Vdc
f = 1.0 MHz
20
10
20 30 50 70 100 200 300
f, FREQUENCY (MHz)
Figure 3. Figure of Merit versus Frequency
0.96
−75 −50 −25
0 +25 +50 +75 +100 +125
T_J, JUNCTION TEMPERATURE (°C)
Figure 4. Diode Capacitance versus Temperature
10
5
T_A = 125°C
2
1
0.5
T_A = 75°C
0.2
0.1
0.05
T_A = 25°C
0.02
0.01
0
2
4
6
8
10
12
14
V_R, REVERSE VOLTAGE (VOLTS)
Figure 5. Reverse Current versus Reverse Voltage
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