MMBV432LT1_06 Datasheet, PDF (2/4 Pages) ON Semiconductor – Silicon Tuning Diode

MMBV432LT1
ELECTRICAL CHARACTERISTICS (EACH DIODE) (T_A = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Reverse Breakdown Voltage
(I_R = 10 mAdc)
Reverse Voltage Leakage Current
(V_R = 9.0 Vdc)
Diode Capacitance
(V_R = 2.0 Vdc, f = 1.0 MHz)
Capacitance Ratio C2/C8
(f = 1.0 MHz)
V_(BR)R
14
I_R
−
C_T
43
C_R
1.5
Figure of Merit
(V_R = 2.0 Vdc, f = 100 MHz)
Q
100
Typ
Max
−
−
−
100
−
48.1
−
2.0
150
−
Unit
Vdc
nAdc
pF
−
−
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