MMBTA70LT1G Datasheet, PDF (3/7 Pages) ON Semiconductor – General Purpose Transistor

MMBTA70LT1G
NOISE FIGURE CONTOURS
(V_CE = −  5.0 Vdc, T_A = 25°C)
1.0 M
500 k
200 k
100 k
50 k
20 k
10 k
5.0 k
2.0 k
1.0 k
500
200
100
10
BANDWIDTH = 1.0 Hz
1.0 M
500 k
200 k
100 k
50 k
0.5 dB
1.0 dB
2.0 dB
3.0 dB
5.0 dB
20 30 50 70 100 200 300 500 700 1.0 k
I_C, COLLECTOR CURRENT (mA)
20 k
10 k
5.0 k
2.0 k
1.0 k
500
200
100
10
Figure 3. Narrow Band, 100 Hz
BANDWIDTH = 1.0 Hz
0.5 dB
1.0 dB
2.0 dB
3.0 dB
5.0 dB
20 30 50 70 100
200 300 500 700 1.0 k
I_C, COLLECTOR CURRENT (mA)
Figure 4. Narrow Band, 1.0 kHz
1.0 M
500 k
200 k
100 k
50 k
20 k
10 k
5.0 k
2.0 k
1.0 k
500
200
100
10
10 Hz to 15.7 kHz
Noise Figure is Defined as:
0.5 dB
1.0 dB
2.0 dB
3.0 dB
5.0 dB
ƪ ƫ NF + 20 log10
en2 ) 4KTRS ) In ^2RS2
4KTRS
1ń2
e_n = Noise Voltage of the Transistor referred to the input. (Figure 3)
I_n = Noise Current of the Transistor referred to the input. (Figure 4)
K = Boltzman’s Constant (1.38 x 10^−23 j/°K)
T = Temperature of the Source Resistance (°K)
R_S = Source Resistance (Ohms)
20 30 50 70 100 200 300 500 700 1.0 k
I_C, COLLECTOR CURRENT (mA)
Figure 5. Wideband
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