MMBTA70LT1G Datasheet, PDF (2/7 Pages) ON Semiconductor – General Purpose Transistor

MMBTA70LT1G
ELECTRICAL CHARACTERISTICS (T_A = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage
(I_C = −1.0 mAdc, I_B = 0)
Emitter−Base Breakdown Voltage
(I_E = −100 mAdc, I_C = 0)
Collector Cutoff Current
(V_CB = −30 Vdc, I_E = 0)
ON CHARACTERISTICS
DC Current Gain
(I_C = −5.0 mAdc, V_CE = −10 Vdc)
Collector−Emitter Saturation Voltage
(I_C = −10 mAdc, I_B = −1.0 mAdc)
SMALL−SIGNAL CHARACTERISTICS
Current−Gain − Bandwidth Product
(I_C = −5.0 mAdc, V_CE = −10 Vdc, f = 100 MHz)
Output Capacitanc
(V_CB = −10 Vdc, I_E = 0, f = 1.0 MHz)
Symbol
V_(BR)CEO
V_(BR)EBO
I_CBO
h_FE
V_CE(sat)
f_T
C_obo
Min
Max
−40
−4.0
−
−
−
−100
40
400
−
−0.25
125
−
−
4.0
Unit
Vdc
Vdc
nAdc
−
Vdc
MHz
pF
10
7.0
5.0
3.0
2.0 ^{1.0 mA}
1.0
10 20
I_C = 10 mA
TYPICAL NOISE CHARACTERISTICS
(V_CE = −  5.0 Vdc, T_A = 25°C)
1.0
BANDWIDTH = 1.0 Hz
7.0
R_S ≈ 0
5.0
3.0
I_C = 1.0 mA
BANDWIDTH = 1.0 Hz
R_S ≈ ∞
2.0
30 mA
100 mA
300 mA
300 mA
1.0
0.7
100 mA
0.5
0.3
30 mA
0.2
10 mA
50 100 200 500 1.0 k 2.0 k 5.0 k 10 k
f, FREQUENCY (Hz)
0.1
10 20
50 100 200 500 1.0 k 2.0 k 5.0 k 10 k
f, FREQUENCY (Hz)
Figure 1. Noise Voltage
Figure 2. Noise Current
http://onsemi.com
2