MMBTA63LT1_06 Datasheet, PDF (3/4 Pages) ON Semiconductor – Darlington Transistors PNP Silicon

200
100
70
50
30
20
10
7.0
5.0
3.0
2.0
−0.3
T_A = 125°C
25°C
−55°C
−0.5 −0.7 −1.0
MMBTA63LT1, MMBTA64LT1
V_CE = −2.0 V
−5.0 V
−2.0 −3.0
−5.0 −7.0 −10
−20 −30
I_C, COLLECTOR CURRENT (mA)
Figure 1. DC Current Gain
−50 −70 −100
−10 V
−200 −300
−2.0
T_A = 25°C
−1.6
V_BE(sat) @ I_C/I_B = 100
−1.2
V_BE(on) @ V_CE = −5.0 V
−0.8
V_CE(sat) @ I_C/I_B = 1000
I_C/I_B = 100
−0.4
0
−0.3 −0.5 −1.0
−2 −3 −5 −10 −20 −30 −50 −100 −200 −300
I_C, COLLECTOR CURRENT (mA)
Figure 3. “On” Voltage
−2.0
T_A = 25°C
−1.8
−1.6
I_C = −10 mA −50 mA −100 mA −175 mA
−1.4
−300 mA
−1.2
−1.0
−0.8
−0.6
−0.1−0.2 −0.5 −1 −2 −5 −10 −20 −50 −100−200−500 −1K−2K −5K−10K
I_B, BASE CURRENT (mA)
Figure 2. Collector Saturation Region
10
V_CE = −5.0 V
4.0 ^{f = 100 MHz}
3.0 ^TA ^{= 25°C}
2.0
1.0
0.4
0.2
0.1
−1.0 −2.0
−5.0 −10 −20 −50 −100 −200
I_C, COLLECTOR CURRENT (mA)
−500 −1K
Figure 4. High Frequency Current Gain
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