MMBTA63LT1_06 Datasheet, PDF (2/4 Pages) ON Semiconductor – Darlington Transistors PNP Silicon

MMBTA63LT1, MMBTA64LT1
ELECTRICAL CHARACTERISTICS (T_A = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage
(I_C = −100 mAdc)
Collector Cutoff Current
(V_CB = −30 Vdc)
Emitter Cutoff Current
(V_EB = −10 Vdc)
ON CHARACTERISTICS
DC Current Gain (Note 3)
(I_C = −10 mAdc, V_CE = −5.0 Vdc)
(I_C = −10 mAdc, V_CE = −5.0 Vdc)
(I_C = −100 mAdc, V_CE = −5.0 Vdc)
(I_C = −100 mAdc, V_CE = −5.0 Vdc)
Collector −Emitter Saturation Voltage
(I_C = −100 mAdc, I_B = −0.1 mAdc)
Base − Emitter On Voltage
(I_C = −100 mAdc, V_CE = −5.0 Vdc)
SMALL− SIGNAL CHARACTERISTICS
Current −Gain − Bandwidth Product
(I_C = −10 mAdc, V_CE = −5.0 Vdc, f = 100 MHz)
3. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%.
MMBTA63
MMBTA64
MMBTA63
MMBTA64
Symbol
V_(BR)CEO
I_CBO
I_EBO
h_FE
V_CE(sat)
V_BE(on)
f_T
Min
Max
−30
−
−
−100
−
−100
5,000
10,000
10,000
20,000
−
−
−
−
−
−
−1.5
−2.0
125
−
Unit
Vdc
nAdc
nAdc
−
Vdc
Vdc
MHz
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