MMBTA63LT1G Datasheet, PDF (3/4 Pages) ON Semiconductor – Darlington Transistors

200
100
70
50
30
20
10
7.0
5.0
3.0
2.0
-0.3
MMBTA63LT1G, MMBTA64LT1G, SMMBTA64LT1G
T_A = 125°C
25°C
V_CE = -2.0 V
-5.0 V
-55°C
-0.5 -0.7 -1.0
-2.0 -3.0
-5.0 -7.0 -10
-20 -30
I_C, COLLECTOR CURRENT (mA)
Figure 1. DC Current Gain
-50 -70 -100
-10 V
-200 -300
-2.0
T_A = 25°C
-1.6
V_BE(sat) @ I_C/I_B = 100
-1.2
V_BE(on) @ V_CE = -5.0 V
-0.8
V_CE(sat) @ I_C/I_B = 1000
I_C/I_B = 100
-0.4
0
-0.3 -0.5 -1.0
-2 -3 -5 -10 -20 -30 -50 -100 -200 -300
I_C, COLLECTOR CURRENT (mA)
Figure 3. “On” Voltage
-2.0
T_A = 25°C
-1.8
-1.6
I_C = -10 mA -50 mA -100 mA -175 mA
-1.4
-300 mA
-1.2
-1.0
-0.8
-0.6
-0.1-0.2 -0.5 -1 -2 -5 -10 -20 -50 -100-200-500 -1K-2K -5K-10K
I_B, BASE CURRENT (mA)
Figure 2. Collector Saturation Region
10
V_CE = -5.0 V
4.0 ^{f = 100 MHz}
3.0 ^TA ^{= 25°C}
2.0
1.0
0.4
0.2
0.1
-1.0 -2.0
-5.0 -10 -20 -50 -100 -200
I_C, COLLECTOR CURRENT (mA)
-500 -1K
Figure 4. High Frequency Current Gain
1
1 ms
10 ms
0.1
100 ms
1s
 0.01
Thermal Limit
Single Pulse Test
@ T_A = 25°C
0.001
0.01
0.1
1.0
10
100
V_CE, COLLECTOR-EMITTER VOLTAGE (V)
Figure 5. Safe Operating Area
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