MMBTA63LT1G Datasheet, PDF (2/4 Pages) ON Semiconductor – Darlington Transistors

MMBTA63LT1G, MMBTA64LT1G, SMMBTA64LT1G
ELECTRICAL CHARACTERISTICS (T_A = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage
(I_C = −100 mAdc)
Collector Cutoff Current
(V_CB = −30 Vdc)
Emitter Cutoff Current
(V_EB = −10 Vdc)
ON CHARACTERISTICS
DC Current Gain (Note 3)
(I_C = −10 mAdc, V_CE = −5.0 Vdc)
MMBTA63
(I_C = −10 mAdc, V_CE = −5.0 Vdc)
MMBTA64, SMMBTA64
(I_C = −100 mAdc, V_CE = −5.0 Vdc)
MMBTA63
(I_C = −100 mAdc, V_CE = −5.0 Vdc)
MMBTA64, SMMBTA64
V_(BR)CEO
−30
I_CBO
−
I_EBO
−
h_FE
5,000
10,000
10,000
20,000
−
−100
−100
−
−
−
−
Vdc
nAdc
nAdc
−
Collector −Emitter Saturation Voltage
(I_C = −100 mAdc, I_B = −0.1 mAdc)
V_CE(sat)
−
Vdc
−1.5
Base − Emitter On Voltage
(I_C = −100 mAdc, V_CE = −5.0 Vdc)
V_BE(on)
−
Vdc
−2.0
SMALL− SIGNAL CHARACTERISTICS
Current −Gain − Bandwidth Product
(I_C = −10 mAdc, V_CE = −5.0 Vdc, f = 100 MHz)
f_T
MHz
125
−
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%.
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