MMBT6521LT1G Datasheet, PDF (3/7 Pages) ON Semiconductor – Amplifier Transistor

MMBT6521LT1G
TYPICAL NOISE CHARACTERISTICS
(V_CE = 5.0 Vdc, T_A = 25°C)
20
I_C = 1.0 mA
300 mA
10
BANDWIDTH = 1.0 Hz
R_S = 0
7.0
100 mA
5.0
10 mA
3.0
30 mA
2.0
10 20
50 100 200 500 1 k 2 k
f, FREQUENCY (Hz)
Figure 4. Noise Voltage
5 k 10 k
100
50
I_C = 1.0 mA
20
10
5.0
300 mA
BANDWIDTH = 1.0 Hz
R_S ≈ ∞
100 mA
2.0
1.0
0.5
0.2
0.1
10
30 mA
10 mA
20 50 100 200 500 1 k 2 k
f, FREQUENCY (Hz)
Figure 5. Noise Current
5 k 10 k
500 k
200 k
100 k
50 k
20 k
10 k
5 k
2 k
1 k
500
200
100
50
10
500 k
200 k
100 k
50 k
20 k
10 k
5 k
2 k
1 k
500
200
100
50
10
NOISE FIGURE CONTOURS
(V_CE = 5.0 Vdc, T_A = 25°C)
BANDWIDTH = 1.0 Hz
1 M
500 k
200 k
100 k
50 k
20 k
10 k
2.0 dB
3.0 dB _{4.0 dB}
5 k
6.0 dB
10 dB
2 k
1 k
500
20 30 50 70 100
200 300 500 700 1 k
I_C, COLLECTOR CURRENT (mA)
Figure 6. Narrow Band, 100 Hz
200
100
10
BANDWIDTH = 1.0 Hz
1.0 dB
2.0 dB
3.0 dB
5.0 dB
8.0 dB
20 30 50 70 100
200 300 500 700 1 k
I_C, COLLECTOR CURRENT (mA)
Figure 7. Narrow Band, 1.0 kHz
10 Hz to 15.7 kHz
1.0 dB
2.0 dB
3.0 dB
5.0 dB
8.0 dB
Noise Figure is defined as:
ǒ Ǔ NF + 20 log10
en2 ) 4KTRS ) In ^2RS2 1ń2
4KTRS
e_n = Noise Voltage of the Transistor referred to the input. (Figure 3)
I_n = Noise Current of the Transistor referred to the input. (Figure 4)
K = Boltzman’s Constant (1.38 x 10^−23 j/°K)
T = Temperature of the Source Resistance (°K)
R_S = Source Resistance (Ohms)
20 30 50 70 100 200 300
I_C, COLLECTOR CURRENT (mA)
Figure 8. Wideband
500 700 1 k
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