MMBT6521LT1G Datasheet, PDF (2/7 Pages) ON Semiconductor – Amplifier Transistor

MMBT6521LT1G
ELECTRICAL CHARACTERISTICS (T_A = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage
(I_C = 0.5 mAdc, I_B = 0)
Emitter −Base Breakdown Voltage
(I_E = 10 mAdc, I_C = 0)
Collector Cutoff Current
(V_CB = 30 Vdc, I_E = 0)
Emitter Cutoff Current
(V_EB = 5.0 Vdc, I_C = 0)
ON CHARACTERISTICS
DC Current Gain
(I_C = 100 mAdc, V_CE = 10 Vdc)
(I_C = 2.0 mAdc, V_CE = 10 Vdc)
Collector −Emitter Saturation Voltage
(I_C = 50 mAdc, I_B = 5.0 mAdc)
SMALL−SIGNAL CHARACTERISTICS
Output Capacitance
(V_CB = 10 Vdc, I_E = 0, f = 1.0 MHz)
Noise Figure
(I_C = 10 mAdc, V_CE = 5.0 Vdc, Power Bandwidth = 15.7 kHz,
3.0 dB points @ = 10 Hz and 10 kHz)
R_S
i_n
e_n
IDEAL
TRANSISTOR
Symbol Min Max Unit
V_(BR)CEO
25
V_(BR)EBO
4.0
I_CBO
−
I_EBO
−
Vdc
−
Vdc
−
0.5 mAdc
nAdc
10
h_FE
−
150
−
300 600
V_CE(sat)
Vdc
−
0.5
C_obo
NF
pF
−
3.5
dB
−
3.0
Figure 1. Transistor Noise Model
300 ns
DUTY CYCLE = 2%
- 0.5 V
<1.0 ns
EQUIVALENT SWITCHING TIME TEST CIRCUITS
+ 3.0 V
+10.9 V
10 < t₁ < 500 ms
t₁
275 _{DUTY CYCLE = 2%}
10 k
0
C_S < 4.0 pF*
- 9.1 V
+10.9 V
10 k
< 1.0 ns ^1N916
+ 3.0 V
275
C_S < 4.0 pF*
Figure 2. Turn−On Time
*Total shunt capacitance of test jig and connectors
Figure 3. Turn−Off Time
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