MMBT3904TT1 Datasheet, PDF (3/12 Pages) ON Semiconductor – General Purpose Transistors

MMBT3904TT1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
SMALL–SIGNAL CHARACTERISTICS
Current–Gain – Bandwidth Product
(IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz)
Output Capacitance
(VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz)
Input Capacitance
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
Input Impedance
(VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz)
Voltage Feedback Ratio
(VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz)
Small–Signal Current Gain
(VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz)
Output Admittance
(VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz)
Noise Figure
(VCE = 5.0 Vdc, IC = 100 mAdc, RS = 1.0 k Ω, f = 1.0 kHz)
SWITCHING CHARACTERISTICS
Delay Time
(VCC = 3.0 Vdc, VBE = –0.5 Vdc)
Rise Time
(IC = 10 mAdc, IB1 = 1.0 mAdc)
Storage Time
Fall Time
(VCC = 3.0 Vdc, IC = 10 mAdc)
(IB1 = IB2 = 1.0 mAdc)
MMBT3904TT1
MMBT3904TT1
MMBT3904TT1
MMBT3904TT1
Symbol
fT
Cobo
Cibo
hie
hre
hfe
hoe
NF
td
tr
ts
tf
Min
300
–
–
1.0
0.5
100
1.0
–
–
–
–
–
Max
Unit
MHz
–
pF
4.0
pF
8.0
kΩ
10
X 10–4
8.0
–
400
mmhos
40
dB
5.0
35
ns
35
200
ns
50
DUTY CYCLE = 2%
300 ns
-ā0.5 V
+10.9 V
10 k
< 1 ns
+3 V
275
10 < t1 < 500 ms
t1
DUTY CYCLE = 2%
CS < 4 pF*
0
-ā9.1 V
+10.9 V
10 k
< 1 ns
1N916
+3 V
275
CS < 4 pF*
* Total shunt capacitance of test jig and connectors
Figure 2. Delay and Rise Time
Equivalent Test Circuit
Figure 3. Storage and Fall Time
Equivalent Test Circuit
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