MMBT3904TT1 Datasheet, PDF (2/12 Pages) ON Semiconductor – General Purpose Transistors

MMBT3904TT1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage ⁽³⁾
(IC = 1.0 mAdc, IB = 0)
Collector–Base Breakdown Voltage
(IC = 10 mAdc, IE = 0)
Emitter–Base Breakdown Voltage
(IE = 10 mAdc, IC = 0)
Base Cutoff Current
(VCE = 30 Vdc, VEB = 3.0 Vdc)
Collector Cutoff Current
(VCE = 30 Vdc, VEB = 3.0 Vdc)
ON CHARACTERISTICS ⁽³⁾
DC Current Gain
(IC = 0.1 mAdc, VCE = 1.0 Vdc)
(IC = 1.0 mAdc, VCE = 1.0 Vdc)
(IC = 10 mAdc, VCE = 1.0 Vdc)
(IC = 50 mAdc, VCE = 1.0 Vdc)
(IC = 100 mAdc, VCE = 1.0 Vdc)
Collector–Emitter Saturation Voltage
(IC = 10 mAdc, IB = 1.0 mAdc)
(IC = 50 mAdc, IB = 5.0 mAdc)
Base–Emitter Saturation Voltage
(IC = 10 mAdc, IB = 1.0 mAdc)
(IC = 50 mAdc, IB = 5.0 mAdc)
(3) Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
Symbol
Min
V(BR)CEO
40
–40
V(BR)CBO
60
–40
V(BR)EBO
6.0
–5.0
IBL
–
–
ICEX
–
–
hFE
40
70
100
60
30
VCE(sat)
–
–
VBE(sat)
0.65
–
Max
Unit
Vdc
–
–
Vdc
–
–
Vdc
–
–
nAdc
50
–50
nAdc
50
–50
–
–
–
300
–
–
Vdc
0.2
0.3
Vdc
0.85
0.95
1.0
D = 0.5
0.2
0.1
0.1
0.05
0.02
0.01 ^0.01
SINGLE PULSE
0.001
0.00001
0.0001
0.001
0.01
0.1
1.0
10
t, TIME (s)
Figure 1. Normalized Thermal Response
100
1000
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