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MMBT2222LT1_01 Datasheet, PDF (3/8 Pages) ON Semiconductor – General Purpose Transistors NPN Silicon
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MMBT2222LT1 MMBT2222ALT1
SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product (4)
(IC = 20 mAdc, VCE = 20 Vdc, f = 100 MHz)
MMBT2222
MMBT2222A
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
Input Capacitance
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
MMBT2222
MMBT2222A
Input Impedance
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
(IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
Voltage Feedback Ratio
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
(IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
Small–Signal Current Gain
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
(IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
Output Admittance
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
(IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
Collector Base Time Constant
(IE = 20 mAdc, VCB = 20 Vdc, f = 31.8 MHz)
MMBT2222A
MMBT2222A
MMBT2222A
MMBT2222A
MMBT2222A
MMBT2222A
MMBT2222A
MMBT2222A
MMBT2222A
Noise Figure
(IC = 100 mAdc, VCE = 10 Vdc, RS = 1.0 kΩ, f = 1.0 kHz)
SWITCHING CHARACTERISTICS (MMBT2222A only)
MMBT2222A
Delay Time
Rise Time
(VCC = 30 Vdc, VBE(off) = –0.5 Vdc,
IC = 150 mAdc, IB1 = 15 mAdc)
Storage Time
Fall Time
(VCC = 30 Vdc, IC = 150 mAdc,
IB1 = IB2 = 15 mAdc)
3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
4. fT is defined as the frequency at which |hfe| extrapolates to unity.
fT
Cobo
Cibo
hie
hre
hfe
hoe
rb, Cc
NF
250
300
—
—
—
2.0
0.25
—
—
50
75
5.0
25
—
—
MHz
—
—
pF
8.0
pF
30
25
kΩ
8.0
1.25
X 10–4
8.0
4.0
—
300
375
mmhos
35
200
ps
150
dB
4.0
td
—
10
ns
tr
—
25
ts
—
225
ns
tf
—
60
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