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MMBT2222LT1_01 Datasheet, PDF (2/8 Pages) ON Semiconductor – General Purpose Transistors NPN Silicon
MMBT2222LT1 MMBT2222ALT1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Max
Unit
ON CHARACTERISTICS
DC Current Gain
(IC = 0.1 mAdc, VCE = 10 Vdc)
(IC = 1.0 mAdc, VCE = 10 Vdc)
(IC = 10 mAdc, VCE = 10 Vdc)
(IC = 10 mAdc, VCE = 10 Vdc, TA = –55°C)
only
(IC = 150 mAdc, VCE = 10 Vdc) (3)
(IC = 150 mAdc, VCE = 1.0 Vdc) (3)
(IC = 500 mAdc, VCE = 10 Vdc) (3)
MMBT2222A
MMBT2222
MMBT2222A
hFE
—
35
—
50
—
75
—
35
—
100
300
50
—
30
—
40
—
Collector–Emitter Saturation Voltage (3)
(IC = 150 mAdc, IB = 15 mAdc)
MMBT2222
MMBT2222A
VCE(sat)
—
—
Vdc
0.4
0.3
(IC = 500 mAdc, IB = 50 mAdc)
Base–Emitter Saturation Voltage (3)
(IC = 150 mAdc, IB = 15 mAdc)
MMBT2222
MMBT2222A
—
1.6
—
1.0
MMBT2222
VBE(sat)
—
Vdc
1.3
MMBT2222A
0.6
1.2
(IC = 500 mAdc, IB = 50 mAdc)
MMBT2222
MMBT2222A
—
2.6
—
2.0
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