MMBT2222L Datasheet, PDF (3/7 Pages) ON Semiconductor – General Purpose Transistors

MMBT2222L, MMBT2222AL, SMMBT2222AL
ELECTRICAL CHARACTERISTICS (T_A = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
SMALL− SIGNAL CHARACTERISTICS
Output Admittance
(I_C = 1.0 mAdc, V_CE = 10 Vdc, f = 1.0 kHz)
(I_C = 10 mAdc, V_CE = 10 Vdc, f = 1.0 kHz)
MMBT2222A, SMMBT2222A
MMBT2222A, SMMBT2222A
Collector Base Time Constant
(I_E = 20 mAdc, V_CB = 20 Vdc, f = 31.8 MHz)
MMBT2222A, SMMBT2222A
Noise Figure (I_C = 100 mAdc, V_CE = 10 Vdc, R_S = 1.0 kW, f = 1.0 kHz)
MMBT2222A, SMMBT2222A
h_oe
rb, C_c
NF
mmhos
5.0
35
25
200
ps
−
150
dB
−
4.0
SWITCHING CHARACTERISTICS (MMBT2222A only)
Delay Time
Rise Time
(V_CC = 30 Vdc, V_BE(off) = − 0.5 Vdc,
t_d
I_C = 150 mAdc, I_B1 = 15 mAdc)
t_r
−
10
ns
−
25
Storage Time
Fall Time
(V_CC = 30 Vdc, I_C = 150 mAdc,
I_B1 = I_B2 = 15 mAdc)
t_s
−
225
ns
t_f
−
60
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
5. f_T is defined as the frequency at which |h_fe| extrapolates to unity.
+16 V
0
- 2 V
SWITCHING TIME EQUIVALENT TEST CIRCUITS
1.0 to 100 ms,
DUTY CYCLE ≈ 2.0%
1 kW
< 2 ns
+ 30 V
200
C_S* < 10 pF
+16 V
0
-14 V
1.0 to 100 ms,
DUTY CYCLE ≈ 2.0%
< 20 ns
1k
1N914
+ 30 V
200
C_S* < 10 pF
Scope rise time < 4 ns
- 4 V
*Total shunt capacitance of test jig, connectors, and oscilloscope.
Figure 1. Turn−On Time
Figure 2. Turn−Off Time
1000
700
500
300
200
100
70
50
30
20
10
0.1
0.2 0.3 0.5 0.7 1.0
T_J = 125°C
25°C
-55°C
V_CE = 1.0 V
V_CE = 10 V
2.0 3.0 5.0 7.0 10
20 30
I_C, COLLECTOR CURRENT (mA)
Figure 3. DC Current Gain
50 70 100
200 300 500 700 1.0 k
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