MMBT2222L Datasheet, PDF (1/7 Pages) ON Semiconductor – General Purpose Transistors

MMBT2222L, MMBT2222AL,
SMMBT2222AL
General Purpose Transistors
NPN Silicon
Features
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
• S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
MAXIMUM RATINGS
Rating
Symbol Value
Unit
Collector −Emitter Voltage
V_CEO
Vdc
MMBT2222L
30
MMBT2222AL, SMMBT2222AL
40
Collector −Base Voltage
V_CBO
Vdc
MMBT2222L
60
MMBT2222AL, SMMBT2222AL
75
Emitter −Base Voltage
V_EBO
Vdc
MMBT2222L
5.0
MMBT2222AL, SMMBT2222AL
6.0
Collector Current − Continuous
Collector Current − Peak (Note 3)
THERMAL CHARACTERISTICS
I_C
600
mAdc
I_CM
1100
mAdc
Characteristic
Total Device Dissipation FR− 5 Board
(Note 1) T_A = 25°C
Derate above 25°C
Symbol
P_D
Max
225
1.8
Unit
mW
mW/°C
Thermal Resistance, Junction−to−Ambient
Total Device Dissipation Alumina
Substrate (Note 2) T_A = 25°C
Derate above 25°C
R_qJA
P_D
556
°C/W
300
mW
2.4
mW/°C
Thermal Resistance, Junction−to−Ambient R_qJA
417
°C/W
Junction and Storage Temperature Range T_J, T_stg −55 to +150 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. FR− 5 = 1.0  0.75  0.062 in.
2. Alumina = 0.4  0.3  0.024 in. 99.5% alumina.
3. Reference SOA curve.
www.onsemi.com
COLLECTOR
3
1
BASE
2
EMITTER
3
1
2
SOT−23
CASE 318
STYLE 6
MARKING DIAGRAM
xxx M G
G
1
xxx = 1P or M1B
M = Date Code*
G = Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
© Semiconductor Components Industries, LLC, 1994
1
October, 2016 − Rev. 11
Publication Order Number:
MMBT2222LT1/D