MMBT2132T3_06 Datasheet, PDF (3/4 Pages) ON Semiconductor – General Purpose Transistors NPN Bipolar Junction Transistor

1.0
0.1
0.01
0.001
V_BE(sat)
MMBT2132T3
0.16
I_C/I_B = 10
0.12
T = 85°C
25°C
0°C
0.08
V_CE(sat)
0.04
I_C/I_B = 100
0.01
0.1
1.0
I_C, COLLECTOR CURRENT (A)
Figure 5. “ON” Voltages
0
0.01
0.1
1.0
I_C, COLLECTOR CURRENT (A)
Figure 6. Collector−Emitter Saturation Voltage
0.2
I_C/I_B = 100
0.15
0.1
1.0
0°C
25°C
0.75
T = 85°C
0.5
−40°C
25°C
150°C
0.05
0.25
0
0.01
0.1
1.0
I_C, COLLECTOR CURRENT (A)
Figure 7. Collector−Emitter Saturation Voltage
0
0.0001
V_CE = 1.0 V
0.001
0.01
0.1
1.0
I_C, COLLECTOR CURRENT (A)
Figure 8. V_BE(on) Voltage
1.0
0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
0.0001
0.001
P_(pk)
t₁
t₂
DUTY CYCLE, D = t₁/t₂
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t₁ (SEE AN569)
Z_qJA(t) = r(t) R_qJA
T_J(pk) − T_A = P_(pk) Z_qJA(t)
0.01
0.1
1.0
TIME (sec)
10
100
Figure 9. Thermal Response Curve
http://onsemi.com
3