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MMBT2132T3_06 Datasheet, PDF (2/4 Pages) ON Semiconductor – General Purpose Transistors NPN Bipolar Junction Transistor
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MMBT2132T3
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector −Base Breakdown Voltage
(IC = 100 mAdc)
Collector −Emitter Breakdown Voltage
(IC = 10 mAdc)
Emitter−Base Breakdown Voltage
(IE = 100 mAdc)
Collector Cutoff Current
(VCB = 25 Vdc, IE = 0 Adc)
(VCB = 25 Vdc, IE = 0 Adc, TA = 125°C)
Emitter Cutoff Current
ON CHARACTERISTICS
(VEB = 5.0 Vdc, IC = 0 Adc)
DC Current Gain
Collector −Emitter Saturation Voltage
Collector −Emitter Saturation Voltage
Base−Emitter Saturation Voltage
Collector−Emitter Saturation Voltage
(VCE = 3.0 Vdc, IC = 100 mAdc)
(IC = 500 mAdc, IB = 50 mAdc)
(IC = 700 mAdc, IB = 70 mAdc)
(IC = 700 mAdc, IB = 70 mAdc)
(IC = 700 mAdc, VCE = 1.0 Vdc)
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE
VCE(sat)
VCE(sat)
VBE(sat)
VBE(on)
Min
Typ
Max
40
−
−
30
−
−
5.0
−
−
−
−
1.0
−
−
10
−
−
10
150
−
−
−
−
0.25
−
−
0.4
−
−
1.1
−
−
1.0
Unit
Vdc
Vdc
Vdc
mAdc
mAdc
Vdc
Vdc
Vdc
Vdc
Vdc
0.3
0.1
0.7 A
0.2
0.5 A
0.1
0.1 A
10 mA
IC = 1.0 mA
0
0.000001 0.00001 0.0001
0.001
0.01
0.1
IB, BASE CURRENT (A)
Figure 1. Collector Saturation Region
0.1 A
10 mA
IC = 1.0 mA
0
0.000001 0.00001 0.0001
0.001
0.01
0.1
IB, BASE CURRENT (A)
Figure 2. Collector Saturation Region
1000
100
0.01
1.0
VCE = 3.0 V
0.1
25°C
150°C
0.01
−40°C
0.1
IC, COLLECTOR CURRENT (A)
Figure 3. DC Current Gain
0.001
1.0
0.001
VBE(sat)
VCE(sat)
IC/IB = 10
0.01
0.1
1.0
IC, COLLECTOR CURRENT (A)
Figure 4. “ON” Voltages
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