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| MMBD330T1G Datasheet, PDF (3/4 Pages) ON Semiconductor – Schottky Barrier Diodes | |||
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MMBD330T1G, MMBD770T1G
TYPICAL CHARACTERISTICS
MMBD770T1
2.0
MMBD770T1
1.6
1.2
f = 1.0 MHz
500
MMBD770T1
400
KRAKAUER METHOD
300
0.8
200
0.4
100
0
0 5.0 10 15 20 25 30 35 40 45 50
VR, REVERSE VOLTAGE (VOLTS)
Figure 5. Total Capacitance
0
0 10 20 30 40 50 60 70 80 90 100
IF, FORWARD CURRENT (mA)
Figure 6. Minority Carrier Lifetime
10
MMBD770T1
1.0
TA = 100ï°C
TA = 75ï°C
0.1
0.01
TA = 25ï°C
100
MMBD770T1
10
TA = 85ï°C
TA = - 40ï°C
1.0
TA = 25ï°C
0.001
0
0.1
10
20
30
40
50
0.2 0.4
0.8
1.2
1.6
2.0
VR, REVERSE VOLTAGE (VOLTS)
VF, FORWARD VOLTAGE (VOLTS)
Figure 7. Reverse Leakage
Figure 8. Forward Voltage
http://onsemi.com
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