MMBD330T1G Datasheet, PDF (1/4 Pages) ON Semiconductor – Schottky Barrier Diodes

MMBD330T1G,
MMBD770T1G
Schottky Barrier Diodes
Schottky barrier diodes are designed primarily for high- efficiency
UHF and VHF detector applications. Readily available to many other
fast switching RF and digital applications. They are housed in the
SOT- 323/SC- 70 package which is designed for low- power surface
mount applications.
Features
 Extremely Low Minority Carrier Lifetime
 Very Low Capacitance
 Low Reverse Leakage
 Available in 8 mm Tape and Reel
 These Devices are Pb- Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Reverse Voltage
MMBD330T1
V_R
30
Vdc
MMBD770T1
70
Forward Continuous Current (DC)
Nonrepetitive Peak Forward Current
(Note 1)
I_F
I_FSM
200
mA
1.0
A
Forward Power Dissipation
T_A = 25C
Junction Temperature
Storage Temperature Range
P_F
120
mW
T_J
-- 55 to +125 C
T_stg
-- 55 to +150 C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. 60 Hz Halfsine.
http://onsemi.com
1
3
MARKING
DIAGRAMS
3
1
2
SC- 70/SOT- 323
CASE 419
XX M G
G
1
XX
= Specific Device Code
4T
= MMBD330T1
5H
= MMBD770T1
M
= Date Code
G
= Pb--Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
upon the manufacturing location.
ORDERING INFORMATION
Device
Package
Shipping^†
MMBD330T1G SC--70
(Pb--Free)
3000/Tape & Reel
MMBD770T1G SC--70
(Pb--Free)
3000/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
 Semiconductor Components Industries, LLC, 2010
1
October, 2010 - Rev. 5
Publication Order Number:
MMBD330T1/D