MJW21195 Datasheet, PDF (3/8 Pages) ON Semiconductor – Silicon Power Transistors

MJW21195 (PNP) MJW21196 (NPN)
TYPICAL CHARACTERISTICS
PNP MJW21195
1000
NPN MJW21196
1000
TJ = 100°C
100
25°C
-ā25°C
VCE = 20 V
10
0.1
1.0
10
100
IC, COLLECTOR CURRENT (AMPS)
Figure 3. DC Current Gain, VCE = 20 V
100
TJ = 100°C
25°C
-ā25°C
VCE = 20 V
10
0.1
1.0
10
100
IC, COLLECTOR CURRENT (AMPS)
Figure 4. DC Current Gain, VCE = 20 V
PNP MJW21195
1000
NPN MJW21196
1000
TJ = 100°C
100
25°C
-ā25°C
VCE = 5 V
10
0.1
1.0
10
100
IC, COLLECTOR CURRENT (AMPS)
Figure 5. DC Current Gain, VCE = 5 V
PNP MJW21195
30
2.0 A
25
1.5 A
20
1.0 A
15
IB = 0.5 A
10
5.0
TJ = 25°C
0
0
5.0
10
15
20
25
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 7. Typical Output Characteristics
100
TJ = 100°C
25°C
-ā25°C
VCE = 5 V
10
0.1
1.0
10
100
IC, COLLECTOR CURRENT (AMPS)
Figure 6. DC Current Gain, VCE = 5 V
NPN MJW21196
30
2.0 A
25
1.5 A
1.0 A
20
IB = 0.5 A
15
10
5.0
TJ = 25°C
0
0
5.0
10
15
20
25
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 8. Typical Output Characteristics
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