MJW21195 Datasheet, PDF (2/8 Pages) ON Semiconductor – Silicon Power Transistors

MJW21195 (PNP) MJW21196 (NPN)
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typical
Max
OFF CHARACTERISTICS
Collector–Emitter Sustaining Voltage (IC = 100 mAdc, IB = 0)
Collector Cutoff Current (VCE = 200 Vdc, IB = 0)
VCEO(sus) 250
–
–
ICEO
–
–
100
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typical
Max
OFF CHARACTERISTICS
Emitter Cutoff Current (VCE = 5 Vdc, IC = 0)
Collector Cutoff Current (VCE = 250 Vdc, VBE(off) = 1.5 Vdc)
SECOND BREAKDOWN
Second Breakdown Collector Current with Base Forward Biased
(VCE = 50 Vdc, t = 1 s (non–repetitive)
(VCE = 80 Vdc, t = 1 s (non–repetitive)
ON CHARACTERISTICS
DC Current Gain
(IC = 8 Adc, VCE = 5 Vdc)
(IC = 16 Adc, IB = 5 Adc)
Base–Emitter On Voltage (IC = 8 Adc, VCE = 5 Vdc)
Collector–Emitter Saturation Voltage
(IC = 8 Adc, IB = 0.8 Adc)
(IC = 16 Adc, IB = 3.2 Adc)
DYNAMIC CHARACTERISTICS
Total Harmonic Distortion at the Output
VRMS = 28.3 V, f = 1 kHz, PLOAD = 100 WRMS
(Matched pair hFE = 50 @ 5 A/5 V)
hFE
unmatched
hFE
matched
IEBO
–
ICEX
–
–
50
–
50
IS/b
4.0
–
–
2.25
–
–
hFE
20
8
VBE(on)
–
VCE(sat)
–
–
–
80
–
–
–
2.0
–
1.0
–
3
THD
–
0.8
–
–
0.08
–
Current Gain Bandwidth Product
(IC = 1 Adc, VCE = 10 Vdc, ftest = 1 MHz)
Output Capacitance
(VCB = 10 Vdc, IE = 0, ftest = 1 MHz)
fT
4
Cob
–
–
–
–
500
Unit
Vdc
µAdc
Unit
µAdc
µAdc
Adc
Vdc
Vdc
%
MHz
pF
PNP MJW21195
NPN MJW21196
6.5
6.0
VCE = 10 V
5.5
5.0
4.5
VCE = 5 V
4.0
3.5
3.0
TJ = 25°C
ftest = 1 MHz
2.5
2.0
0.1
1.0
7.5
7.0
6.5
VCE = 10 V
6.0
5.5
5.0
VCE = 5 V
4.5
4.0
3.5
3.0
2.5 ^{TJ = 25°C}
2.0 ^{ftest = 1 MHz}
1.5
1.0
10
0.1
1.0
10
IC, COLLECTOR CURRENT (AMPS)
IC, COLLECTOR CURRENT (AMPS)
Figure 1. Typical Current Gain
Bandwidth Product
Figure 2. Typical Current Gain
Bandwidth Product
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