MJE2955T_15 Datasheet, PDF (3/4 Pages) Unisonic Technologies – HIGH VOLTAGE TRANSISTOR

MJE2955T (PNP), MJE3055T (NPN)
10
7.0
100 ms
5.0
5.0 ms ^1.0 ms
dc
3.0
2.0
1.0
0.7
0.5
0.3
0.2
0.1
5.0
T_J = 150°C
SECOND BREAKDOWN LIMITED
BONDING WIRE LIMITED
THERMALLY LIMITED
T_C = 25°C (D = 0.1)
7.0
10
20
30
50 60
V_CE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 1. Active−Region Safe Operating Area
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate I_C − V_CE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 1 is based on T_J(pk) = 150°C. T_C is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided
T_J(pk) ≤ 150°C. At high case temperatures, thermal
limitations will reduce the power that can be handled to
values less than the limitations imposed by second
breakdown.
500
300
200
T_J = 150°C
100
25°C
50
- 55°C
30
20
V_CE = 2.0 V
10
5.0
0.01 0.02
0.05 0.1 0.2 0.5 1.0 2.0
I_C, COLLECTOR CURRENT (AMP)
Figure 2. DC Current Gain
5.0 10
90
80
70
60
50
40
MJE3055T
MJE2955T
30
20
10
0
0
25
50
75 100 125 150 175
T_C, CASE TEMPERATURE (°C)
Figure 3. Power Derating
MJE2955T
2.0
MJE3055T
1.4
T_J = 25°C
1.6
1.2 ^TJ ^{= 25°C}
1.0
1.2
0.8 _{VBE(sat) @ IC/IB = 10}
0.8
V_BE(sat) @ I_C/I_B = 10
0.6
V_BE @ V_CE = 2.0 V
V_BE @ V_CE = 3.0 V
0.4
0.4
V_CE(sat) @ I_C/I_B = 10
0
0.1
0.2 0.3 0.5
1.0
2.0 3.0 5.0
10
0.2
0
0.1
V_CE(sat) @ I_C/I_B = 10
0.2 0.3 0.5
1.0
2.0 3.0 5.0
10
I_C, COLLECTOR CURRENT (AMP)
I_C, COLLECTOR CURRENT (AMP)
Figure 4. “On” Voltages
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