MJE2955T_15 Datasheet, PDF (1/4 Pages) Unisonic Technologies – HIGH VOLTAGE TRANSISTOR

MJE2955T (PNP),
MJE3055T (NPN)
Complementary Silicon
Plastic Power Transistors
These devices are designed for use in general−purpose amplifier and
switching applications.
Features
• High Current Gain − Bandwidth Product
• These Devices are Pb−Free and are RoHS Compliant*
MAXIMUM RATINGS
Rating
Symbol Value
Unit
Collector−Emitter Voltage
Collector−Base Voltage
Emitter−Base Voltage
Collector Current
Base Current
Total Device Dissipation
@ T_C = 25°C
Derate above 25°C
V_CEO
60
V_CB
70
V_EB
5.0
I_C
10
I_B
6.0
P_D
(Note 1)
75
0.6
Vdc
Vdc
Vdc
Adc
Adc
W
W/°C
Operating and Storage Junction
Temperature Range
T_J, T_stg −55 to +150 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Safe Area Curves are indicated by Figure 1. Both limits are applicable and
must be observed.
THERMAL CHARACTERISTICS
Characteristics
Thermal Resistance, Junction−to−Case
Symbol
R_qJC
Max
1.67
Unit
°C/W
www.onsemi.com
10 AMPERE
COMPLEMENTARY SILICON
POWER TRANSISTORS
60 VOLTS − 75 WATTS
PNP
COLLECTOR 2, 4
NPN
COLLECTOR 2, 4
1
BASE
EMITTER 3
4
1
BASE
EMITTER 3
TO−220
CASE 221A−09
STYLE 1
1
2
3
MARKING DIAGRAM
MJExx55TG
AY WW
MJExx55T = Device Code
xx = 29 or 30
G
= Pb−Free Package
A
= Assembly Location
Y
= Year
WW
= Work Week
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
ORDERING INFORMATION
Device
MJE2955TG
MJE3055TG
Package
TO−220
(Pb−Free)
TO−220
(Pb−Free)
Shipping
50 Units / Rail
50 Units / Rail
© Semiconductor Components Industries, LLC, 2015
1
January, 2015 − Rev. 12
Publication Order Number:
MJE2955T/D