MJE15032_14 Datasheet, PDF (3/6 Pages) ON Semiconductor – Complementary Silicon Plastic Power Transistors

MJE15032 (NPN), MJE15033 (PNP)
1.0
0.7 _{D = 0.5}
0.5
0.3
0.2
0.2
0.1
0.1
0.07
0.05
0.05
0.02
0.03
0.02 _0.01
SINGLE PULSE
0.01
0.01 0.02
0.05 0.1 0.2
Z_qJC(t) = r(t) R_qJC
R_qJC = 2.5°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t₁
T_J(pk) - T_C = P_(pk) Z_qJC(t)
P_(pk)
t₁
t₂
DUTY CYCLE, D = t₁/t₂
0.5 1.0 2.0
5.0 10 20
t, TIME (ms)
50 100 200
500 1.0 k
Figure 1. Thermal Response
100
100 ms
10
50 ms
250 ms
10 ms
1.0
0.1
0.01
1.0
10
100
1000
V_CE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 2. MJE15032 & MJE15033
Safe Operating Area
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate I_C − V_CE
limits of the transistor that must be observed for reliable
operation, i.e., the transistor must not be subjected to greater
dissipation then the curves indicate.
The data of Figures 2 and 4 is based on T_J(pk) = 150_C;
T_C is variable depending on conditions. Second breakdown
pulse limits are valid for duty cycles to 10% provided T_J(pk)
< 150_C. T_J(pk) may be calculated from the data in Figure 1.
At high case temperatures, thermal limitations will reduce
the power that can be handled to values less than the
limitations imposed by second breakdown.
T_A T_C
3.0 60
2.0 40
1.0 20
T_C
T_A
00
0
20 40 60 80 100 120 140 160
T, TEMPERATURE (°C)
Figure 3. Power Derating
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