MJE15032_14 Datasheet, PDF(2/6 Page) ON Semiconductor – Complementary Silicon Plastic Power Transistors

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MJE15032_14 Datasheet, PDF (2/6 Pages) ON Semiconductor – Complementary Silicon Plastic Power Transistors

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MJE15032 (NPN), MJE15033 (PNP)

ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

CollectorâEmitter Sustaining Voltage (Note 1)

(IC = 10 mAdc, IB = 0)

Collector Cutoff Current

(VCB = 250 Vdc, IE = 0)

Emitter Cutoff Current

(VBE = 5.0 Vdc, IC = 0)

VCEO(sus)

250

ICBO

IEBO

Vdc

mAdc

ON CHARACTERISTICS (Note 1)

DC Current Gain

(IC = 0.5 Adc, VCE = 5.0 Vdc)

(IC = 1.0 Adc, VCE = 5.0 Vdc)

(IC = 2.0 Adc, VCE = 5.0 Vdc)

hFE

CollectorâEmitter Saturation Voltage

(IC = 1.0 Adc, IB = 0.1 Adc)

BaseâEmitter On Voltage

(IC = 1.0 Adc, VCE = 5.0 Vdc)

VCE(sat)

VBE(on)

Vdc

0.5

Vdc

1.0

DYNAMIC CHARACTERISTICS

Current Gain â Bandwidth Product (Note 2)

(IC = 500 mAdc, VCE = 10 Vdc, ftest = 1.0 MHz)

MHz

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

1. Pulse Test: Pulse Width â¤ 300 ms, Duty Cycle â¤ 2.0%.

2. fT = âªhfeâªâ¢ ftest.

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