MJ14001_05 Datasheet, PDF (3/5 Pages) ON Semiconductor – High−Current Complementary Silicon Power Transistors

MJ14001 (PNP), MJ14002* (NPN), MJ14003* (PNP)
TYPICAL ELECTRICAL CHARACTERISTICS
MJ14002 (NPN)
MJ14001, MJ14003 (PNP)
300
200
100
70
50
V_CE = 3.0 V
30
20
T_J = −55°C
T_J = 25°C
T_J = 150°C
10
7.0
5.0
3.0
0.7 1.0
2.0 3.0 5.0 7.0 10
20 30
I_C, COLLECTOR CURRENT (AMPS)
Figure 3. DC Current Gain
50 70
300
200
100
70
50
30
20
10
7.0
5.0
3.0
0.7 1.0
V_CE = 3.0 V
T_J = −55°C
T_J = 25°C
T_J = 150°C
2.0 3.0 5.0 7.0 10
20 30
I_C, COLLECTOR CURRENT (AMPS)
Figure 4. DC Current Gain
50 70
2.8
2.4
T_J = 25°C
2.0
I_C = 60 A
1.6
I_C = 25 A
1.2
0.8
I_C = 10 A
0.4
0
0.1
0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10
I_B, BASE CURRENT (AMPS)
Figure 5. Collector Saturation Region
2.8
2.4
T_J = 25°C
2.0
I_C = 60 A
1.6
I_C = 25 A
1.2
0.8
I_C = 10 A
0.4
0
0.1
0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10
I_B, BASE CURRENT (AMPS)
Figure 6. Collector Saturation Region
2.8
T_J = 25°C
2.4
2.0
1.6
1.2
0.8
0.4
0
0.7 1.0
V_BE(sat) @ I_C/I_B = 10
V_BE(on) @ V_CE = 3.0 V
V_CE(sat) @ I_C/I_B = 10
2.0 3.0 5.0 7.0 10
20 30
I_C, COLLECTOR CURRENT (AMPS)
Figure 7. “On” Voltages
50 70
2.8
T_J = 25°C
2.4
2.0
1.6
1.2
V_BE(sat) @ I_C/I_B = 10
0.8
0.4
0
0.7
V_BE(on) @ V_CE = 3.0 V
V_CE(sat) @ I_C/I_B = 10
1.0 2.0 3.0 5.0 7.0 10
20 30
I_C, COLLECTOR CURRENT (AMPS)
Figure 8. “On” Voltages
50 70
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