MC74VHC1GT125 Datasheet, PDF (3/8 Pages) ON Semiconductor – Noninverting Buffer / CMOS Logic Level Shifter with LSTTL-Compatible Inputs

MC74VHC1GT125
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ DC ELECTRICAL CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _Symbol
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ^VIH
Parameter
Minimum High−Level
Input Voltage
Test Conditions
V_CC
T_A = 25°C
T_A ≤ 85°C −55 ≤ T_A ≤ 125°C
(V) Min Typ Max Min Max Min
Max _Unit
3.0 1.4
4.5 2.0
5.5 2.0
1.4
1.4
V
2.0
2.0
2.0
2.0
V_IL
Maximum Low−Level
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Input Voltage}
3.0
0.53
0.53
0.53 V
4.5
0.8
0.8
0.8
5.5
0.8
0.8
0.8
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ VOH
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _VOL
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _IIN
Minimum High−Level
Output Voltage
V_IN = V_IH or V_IL
Maximum Low−Level
Output Voltage
V_IN = V_IH or V_IL
Maximum Input
Leakage Current
V_IN = V_IH or V_IL
I_OH = − 50 mA
V_IN = V_IH or V_IL
I_OH = − 4 mA
I_OH = − 8 mA
V_IN = V_IH or V_IL
I_OL = 50 mA
V_IN = V_IH or V_IL
I_OL = 4 mA
I_OL = 8 mA
V_IN = 5.5 V or GND
3.0 2.9 3.0
2.9
2.9
V
4.5 4.4 4.5
4.4
4.4
3.0 2.58
4.5 3.94
2.48
2.34
3.80
3.66
3.0
0.0 0.1
0.1
4.5
0.0 0.1
0.1
0.1
V
0.1
3.0
0.36
0.44
0.52
4.5
0.36
0.44
0.52
0 to
± 0.10
± 1.0
± 1.0 mA
5.5
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ I_CC
Maximum Quiescent
V_IN = V_CC or GND
5.5
Supply Current
1.0
20
40 mA
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _ICCT
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _IOPD
Quiescent Supply
Current
Output Leakage
Current
Input: V_IN = 3.4 V
5.5
Other Input: V_CC or GND
V_OUT = 5.5 V
0.0
1.35
1.50
0.5
5.0
1.65 mA
10 mA
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _IOZ
Maximum 3−State
V_IN = V_IH or V_IL
5.5
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Leakage Current}
V_OUT = V_CC or GND
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _IOPD
Output Leakage
V_OUT = 5.5 V
0.0
Current
± 0.25
0.5
± 2.5
5.0
± 2.5 mA
10 mA
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{AC ELECTRICAL CHARACTERISTICS Input tr = tf = 3.0 ns}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _Symbol
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _tPLH,
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ^tPHL
Parameter
Maximum Propagation
Delay, A to Y
(Figures 3. and 5.)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _tPZL,
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ^tPZH
Maximum Output
Enable TIme,OE to Y
(Figures 4. and 5.)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _tPLZ,
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ t_PHZ
Maximum Output
Disable Time,OE to Y
(Figures 4. and 5.)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _Cin
Maximum Input Capacitance
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _Cout
Maximum Three−State
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Output Capacitance (Output}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ^{in High Impedance State)}
Test Conditions
V_CC = 3.3 ± 0.3 V C_L = 15pF
C_L = 50pF
V_CC = 5.0 ± 0.5 V C_L = 15pF
C_L = 50pF
V_CC = 3.3 ± 0.3 V C_L = 15pF
R_L = R_I = 500 W C_L = 50pF
V_CC = 5.0 ± 0.5 V C_L = 15pF
R_L = R_I = 500 W C_L = 50pF
V_CC = 3.3 ± 0.3 V C_L = 15pF
R_L = R_I = 500 W C_L = 50pF
V_CC = 5.0 ± 0.5 V C_L = 15pF
R_L = R_I = 500 W C_L = 50pF
T_A = 25°C
Min Typ Max
5.6 8.0
8.1 11.5
3.8 5.5
5.3 7.5
5.4 8.0
7.9 11.5
3.6 5.1
5.1 7.1
6.5 9.7
8.0 13.2
4.8 6.8
7.0 8.8
4
10
6
T_A ≤ 85°C
Min Max
1.0 9.5
1.0 13.0
1.0 6.5
1.0 8.5
1.0 9.5
1.0 13.0
1.0 6.0
1.0 8.0
1.0 11.5
1.0 15.0
1.0 8.0
1.0 10.0
10
−55 ≤ T_A ≤ 125°C
Min
Max _Unit
12.0 ns
16.0
8.5
10.5
11.5 ns
15.0
7.5
9.5
14.5 ns
18.0
10.0
12.0
10 pF
pF
Typical @ 25°C, V_CC = 5.0 V
C_PD Power Dissipation Capacitance (Note 6)
14
pF
6. C_PD is defined as the value of the internal equivalent capacitance which is calculated from the operating current consumption without load.
Average operating current can be obtained by the equation: I_CC(OPR) = C_PD  V_CC  f_in + I_CC / 4 (per buffer). C_PD is used to determine the
no−load dynamic power consumption; P_D = C_PD  V_CC2  f_in + I_CC  V_CC.
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