MC74VHC1GT00_07 Datasheet, PDF (3/6 Pages) ON Semiconductor – Single 2−Input NAND Gate/CMOS Logic Level Shifter LSTTL−Compatible Inputs

MC74VHC1GT00
DC ELECTRICAL CHARACTERISTICS
Symbol
V_IH
Parameter
Minimum High−Level
Input Voltage
Test Conditions
V_CC
T_A = 25°C
T_A ≤ 85°C −55 ≤ T_A ≤ 125°C
(V) Min Typ Max Min Max Min
Max _Unit
3.0 1.4
4.5 2.0
5.5 2.0
1.4
1.4
V
2.0
2.0
2.0
2.0
V_IL Maximum Low−Level
Input Voltage
3.0
0.53
0.53
0.53
V
4.5
0.8
0.8
0.8
5.5
0.8
0.8
0.8
V_OH Minimum High−Level
V_IN = V_IH or V_IL
3.0 2.9 3.0
2.9
2.9
V
Output Voltage
I_OH = −50 mA
4.5 4.4 4.5
4.4
4.4
V_IN = V_IH or V_IL
V_IN = V_IH or V_IL
V
I_OH = −4 mA
3.0 2.58
2.48
2.34
I_OH = −8 mA
4.5 3.94
3.80
3.66
V_OL Maximum Low−Level
Output Voltage
V_IN = V_IH or V_IL
I_IN
Maximum Input
Leakage Current
V_IN = V_IH or V_IL
3.0
I_OL = 50 mA
4.5
V_IN = V_IH or V_IL
I_OL = 4 mA
3.0
I_OL = 8 mA
4.5
V_IN = 5.5 V or GND
0 to
5.5
0.0 0.1
0.1
0.0 0.1
0.1
0.36
0.44
0.36
0.44
±0.1
±1.0
0.1
V
0.1
V
0.52
0.52
±1.0 mA
I_CC Maximum Quiescent
V_IN = V_CC or GND
5.5
Supply Current
1.0
20
40
mA
I_CCT
Quiescent Supply
Current
Input: V_IN = 3.4 V
5.5
1.35
1.50
1.65 mA
I_OFF Power Off Output
V_OUT = 5.5 V
0.0
0.5
5.0
10
mA
Leakage Current
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{AC ELECTRICAL CHARACTERISTICS Input tr = tf = 3.0 ns}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _Symbol
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _tPLH,
t_PHL
Parameter
Maximum Propagation
Delay, Input A or B to Y
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{CIN MaximumInput}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ^Capacitance
Test Conditions
V_CC = 3.3 ± 0.3 V C_L = 15 pF
C_L = 50 pF
V_CC = 5.0 ± 0.5 V C_L = 15 pF
C_L = 50 pF
T_A = 25°C
Min Typ Max
4.1 10.0
5.5 13.5
3.1 6.9
3.6 7.9
5.5 10
T_A ≤ 85°C −55 ≤ T_A ≤ 125°C
Min Max Min
Max _Unit
11.0
13.0 ns
15.0
17.5
8.0
9.5
9.0
10.5
10
10
pF
Typical @ 25°C, V_CC = 5.0 V
C_PD Power Dissipation Capacitance (Note 6)
11
pF
6. C_PD is defined as the value of the internal equivalent capacitance which is calculated from the operating current consumption without load.
Average operating current can be obtained by the equation: I_CC(OPR) = C_PD  V_CC  f_in + I_CC. C_PD is used to determine the no−load dynamic
power consumption; P_D = C_PD  V_CC2  f_in + I_CC  V_CC.
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