MC74VHC1GT00_07 Datasheet, PDF (2/6 Pages) ON Semiconductor – Single 2−Input NAND Gate/CMOS Logic Level Shifter LSTTL−Compatible Inputs

MC74VHC1GT00
MAXIMUM RATINGS
Symbol
Characteristics
Value
Unit
V_CC
V_IN
V_OUT
I_IK
I_OK
I_OUT
I_CC
T_STG
T_L
T_J
q_JA
DC Supply Voltage
DC Input Voltage
DC Output Voltage
V_CC = 0
High or Low State
Input Diode Current
Output Diode Current
DC Output Current, per Pin
V_OUT < GND; V_OUT > V_CC
DC Supply Current, V_CC and GND
Storage Temperature Range
Lead Temperature, 1 mm from Case for 10 Seconds
Junction Temperature Under Bias
Thermal Resistance
SC70−5/SC−88A/SOT−353 (Note 1)
SOT23−5/TSOP−5/SC59−5
−0.5 to +7.0
−0.5 to +7.0
−0.5 to 7.0
−0.5 to V_CC + 0.5
−20
+20
+25
+50
*65 to )150
260
)150
350
230
V
V
V
mA
mA
mA
mA
_C
_C
_C
_C/W
P_D
Power Dissipation in Still Air at 85_C
SC70−5/SC−88A/SOT−353
150
mW
SOT23−5/TSOP−5/SC59−5
200
MSL Moisture Sensitivity
Level 1
F_R
V_ESD
Flammability Rating
ESD Withstand Voltage
Oxygen Index: 28 to 34 UL 94 V−0 @ 0.125 in
Human Body Model (Note 2)
u2000
V
Machine Model (Note 3)
u200
Charged Device Model (Note 4)
N/A
I_LATCHUP Latchup Performance
Above V_CC and Below GND at 125_C (Note 5)
$500
mA
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. Measured with minimum pad spacing on an FR4 board, using 10 mm−by−1 inch, 2−ounce copper trace with no air flow.
2. Tested to EIA/JESD22−A114−A.
3. Tested to EIA/JESD22−A115−A.
4. Tested to JESD22−C101−A.
5. Tested to EIA/JESD78.
RECOMMENDED OPERATING CONDITIONS
Symbol
Characteristics
V_CC DC Supply Voltage
V_IN
V_OUT
DC Input Voltage
DC Output Voltage
T_A
Operating Temperature Range
t_r , t_f Input Rise and Fall Time
Min
3.0
0.0
VCC = 0
0.0
High or Low State
0.0
−55
V_CC = 3.3 V ± 0.3 V
0
V_CC = 5.0 V ± 0.5 V
0
Max
5.5
5.5
5.5
V_CC
+125
100
20
Unit
V
V
V
°C
ns/V
Device Junction Temperature versus
Time to 0.1% Bond Failures
Junction
Temperature °C
Time, Hours
80
1,032,200
90
419,300
100
178,700
110
79,600
120
37,000
130
17,800
140
8,900
Time, Years
117.8
47.9
20.4
9.4
4.2
2.0
1.0
FAILURE RATE OF PLASTIC = CERAMIC
UNTIL INTERMETALLICS OCCUR
1
1
10
100
1000
TIME, YEARS
Figure 3. Failure Rate vs. Time Junction Temperature
http://onsemi.com
2