MC74LVX125_11 Datasheet, PDF (3/7 Pages) ON Semiconductor – Quad Bus Buffer

MC74LVX125
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ DC ELECTRICAL CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _Symbol
Parameter
V_CC
Test Conditions
V
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ V_IH
High−Level Input
2.0
Voltage
3.0
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _3.6
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _VIL
Low−Level Input Voltage
2.0
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ 3.0
3.6
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _VOH
High−Level Output
I_OH = −50mA
2.0
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _Voltage
I_OH = −50mA
3.0
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ (Vin = VIH or VIL)
I_OH = −4mA
3.0
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ V_OL
Low−Level Output
I_OL = 50mA
2.0
Voltage
I_OL = 50mA
3.0
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{(Vin = VIH or VIL)}
I_OL = 4mA
3.0
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _Iin
Input Leakage Current V_in = 5.5V or GND
3.6
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _IOZ
Maximum Three−State V_in = V_IL or V_IH
3.6
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ^{Leakage Current}
V_out = V_CC or GND
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ I_CC
Quiescent Supply
Current
V_in = V_CC or GND
3.6
T_A = 25°C
Min
Typ
Max
1.5
2.0
2.4
0.5
0.8
0.8
1.9
2.0
2.9
3.0
2.58
0.0
0.1
0.0
0.1
0.36
±0.1
±0.25
4.0
T_A = − 40 to 85°C
Min
Max Unit
1.5
V
2.0
2.4
0.5
V
0.8
0.8
1.9
V
2.9
2.48
0.1
V
0.1
0.44
±1.0
mA
±2.5
mA
40.0
mA
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{AC ELECTRICAL CHARACTERISTICS (Input tr = tf = 3.0ns)}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{TA = 25°C}
T_A = − 40 to 85°C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _Symbol
Parameter
Test Conditions
Min
Typ
Max
Min
Max Unit
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _tPLH,
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ^tPHL
Propagation Delay
Input to Output
V_CC = 2.7V
C_L = 15pF
C_L = 50pF
5.8
10.1
1.0
13.5 ns
8.3
13.6
1.0
17.0
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ VCC=3.3±0.3V CL=15pF
C_L = 50pF
4.4
6.2
1.0
8.5
6.9
9.7
1.0
12.0
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _tPZL,
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _tPZH
Output Enable Time
OE to O
V_CC = 2.7V
R_L =1kW
C_L = 15pF
C_L = 50pF
5.3
9.3
1.0
12.5 ns
7.8
12.8
1.0
16.0
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{VCC=3.3±0.3V CL=15pF}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ R_L =1kW
C_L = 50pF
4.0
5.6
1.0
7.5
6.5
9.1
1.0
11.0
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ tPLZ,
t_PHZ
Output Disable Time
OE to O
V_CC = 2.7V
R_L =1kW
C_L = 50pF
10.0
15.7
1.0
19.0 ns
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{VCC=3.3±0.3V CL=50pF}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{RL =1kW}
8.3
11.2
1.0
13.0
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _tOSHL
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ t_OSLH
Output−to−Output Skew
(Note 1)
V_CC = 2.7V
V_CC = 3.3 ±0.3V
C_L = 50pF
C_L = 50pF
1.5
1.5
ns
1.5
1.5
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ^{1. Skew is defined as the absolute value of the difference between the actual propagation delay for any two separate outputs of the same device.}
The specification applies to any outputs switching in the same direction, either HIGH−to−LOW (t_OSHL) or LOW−to−HIGH (t_OSLH); parameter
guaranteed by design.
CAPACITIVE CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _Symbol
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _Cin
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _Cout
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _CPD
Parameter
Input Capacitance
Maximum Three−State Output Capacitance
Power Dissipation Capacitance (Note 2)
T_A = 25°C
Min
Typ
Max
4
10
6
14
T_A = − 40 to 85°C
Min
Max Unit
10
pF
pF
pF
2. C_PD is defined as the value of the internal equivalent capacitance which is calculated from the operating current consumption without load.
Average operating current can be obtained by the equation: I_CC(OPR) = C_PD  V_CC  f_in + I_CC / 4 (per bit). C_PD is used to determine the no−load
dynamic power consumption; P_D = C_PD  V_CC2  f_in + I_CC  V_CC.
http://onsemi.com
3