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MC74HCT541A_06 Datasheet, PDF (3/8 Pages) ON Semiconductor – Octal 3−State Non−Inverting Buffer/Line Driver/ Line Receiver With LSTTL−Compatible Inputs | |||
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MC74HCT541A
DC CHARACTERISTICS (Voltages Referenced to GND)
Symbol
Parameter
VIH Minimum HighâLevel Input Voltage
VIL Maximum LowâLevel Input Voltage
VOH Minimum HighâLevel Output Voltage
VOL Maximum LowâLevel Output Voltage
Iin
Maximum Input Leakage Current
IOZ Maximum 3âState Leakage Current
ICC Maximum Quiescent Supply Current
(per Package)
Condition
Vout = 0.1V or VCC â 0.1V
|Iout| ⤠20mA
Vout = 0.1V or VCC â 0.1V
|Iout| ⤠20mA
Vin = VIH or VIL
|Iout| ⤠20mA
Vin = VIH or VIL
|Iout| ⤠6.0mA
Vin = VIH or VIL
|Iout| ⤠20mA
Vin = VIH or VIL
|Iout| ⤠6.0mA
Vin = VCC or GND
Output in High Impedance State
Vin = VIL or VIH
Vout = VCC or GND
Vin = VCC or GND
Iout = 0mA
VCC
Guaranteed Limit
V â55 to 25°C â¤85°C â¤125°C Unit
4.5
2.0
5.5
2.0
2.0
2.0
V
2.0
2.0
4.5
0.8
5.5
0.8
0.8
0.8
V
0.8
0.8
4.5
4.4
5.5
5.4
4.4
4.4
V
5.4
5.4
4.5
3.98
3.84 3.70
4.5
0.1
5.5
0.1
0.1
0.1
V
0.1
0.1
4.5
0.26
0.33 0.40
5.5
±0.1
±1.0
±1.0
mA
5.5
±0.5
±5.0 ±10.0 mA
5.5
4
40
160 mA
DICC
Additional Quiescent Supply Current
Vin = 2.4V, Any One Input
Vin = VCC or GND, Other Inputs
Iout = 0mA
⥠â55°C
5.5
2.9
25 to 125°C
2.4
mA
1. Information on typical parametric values can be found in Chapter 2 of the ON Semiconductor HighâSpeed CMOS Data Book (DL129/D).
2. Total Supply Current = ICC + ΣDICC.
AC CHARACTERISTICS (VCC = 5.0V, CL = 50 pF, Input tr = tf = 6 ns)
Guaranteed Limit
Symbol
Parameter
â55 to 25°C â¤85°C â¤125°C Unit
tPLH,
tPHL
Maximum Propagation Delay, Input A to Output Y
(Figures 1 and 3)
23
28
32
ns
tPLZ,
tPHZ
Maximum Propagation Delay, Output Enable to Output Y
(Figures 2 and 4)
30
34
38
ns
tPZL,
tPZH
Maximum Propagation Delay, Output Enable to Output Y
(Figures 2 and 4)
30
34
38
ns
tTLH,
tTHL
Maximum Output Transition Time, Any Output
(Figures 1 and 3)
12
15
18
ns
Cin Maximum Input Capacitance
10
10
10
pF
Cout Maximum 3âState Output Capacitance (Output in High Impedance State)
15
15
15
pF
NOTE: For propagation delays with loads other than 50 pF, and information on typical parametric values, see Chapter 2 of the ON
Semiconductor HighâSpeed CMOS Data Book (DL129/D).
Typical @ 25°C, VCC = 5.0 V
CPD Power Dissipation Capacitance (Per Buffer)*
55
pF
* Used to determine the noâload dynamic power consumption: PD = CPD VCC2f + ICC VCC. For load considerations, see Chapter 2 of the
ON Semiconductor HighâSpeed CMOS Data Book (DL129/D).
http://onsemi.com
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