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MC74HCT541A_06 Datasheet, PDF (3/8 Pages) ON Semiconductor – Octal 3−State Non−Inverting Buffer/Line Driver/ Line Receiver With LSTTL−Compatible Inputs
MC74HCT541A
DC CHARACTERISTICS (Voltages Referenced to GND)
Symbol
Parameter
VIH Minimum High−Level Input Voltage
VIL Maximum Low−Level Input Voltage
VOH Minimum High−Level Output Voltage
VOL Maximum Low−Level Output Voltage
Iin
Maximum Input Leakage Current
IOZ Maximum 3−State Leakage Current
ICC Maximum Quiescent Supply Current
(per Package)
Condition
Vout = 0.1V or VCC − 0.1V
|Iout| ≤ 20mA
Vout = 0.1V or VCC − 0.1V
|Iout| ≤ 20mA
Vin = VIH or VIL
|Iout| ≤ 20mA
Vin = VIH or VIL
|Iout| ≤ 6.0mA
Vin = VIH or VIL
|Iout| ≤ 20mA
Vin = VIH or VIL
|Iout| ≤ 6.0mA
Vin = VCC or GND
Output in High Impedance State
Vin = VIL or VIH
Vout = VCC or GND
Vin = VCC or GND
Iout = 0mA
VCC
Guaranteed Limit
V −55 to 25°C ≤85°C ≤125°C Unit
4.5
2.0
5.5
2.0
2.0
2.0
V
2.0
2.0
4.5
0.8
5.5
0.8
0.8
0.8
V
0.8
0.8
4.5
4.4
5.5
5.4
4.4
4.4
V
5.4
5.4
4.5
3.98
3.84 3.70
4.5
0.1
5.5
0.1
0.1
0.1
V
0.1
0.1
4.5
0.26
0.33 0.40
5.5
±0.1
±1.0
±1.0
mA
5.5
±0.5
±5.0 ±10.0 mA
5.5
4
40
160 mA
DICC
Additional Quiescent Supply Current
Vin = 2.4V, Any One Input
Vin = VCC or GND, Other Inputs
Iout = 0mA
≥ −55°C
5.5
2.9
25 to 125°C
2.4
mA
1. Information on typical parametric values can be found in Chapter 2 of the ON Semiconductor High−Speed CMOS Data Book (DL129/D).
2. Total Supply Current = ICC + ΣDICC.
AC CHARACTERISTICS (VCC = 5.0V, CL = 50 pF, Input tr = tf = 6 ns)
Guaranteed Limit
Symbol
Parameter
−55 to 25°C ≤85°C ≤125°C Unit
tPLH,
tPHL
Maximum Propagation Delay, Input A to Output Y
(Figures 1 and 3)
23
28
32
ns
tPLZ,
tPHZ
Maximum Propagation Delay, Output Enable to Output Y
(Figures 2 and 4)
30
34
38
ns
tPZL,
tPZH
Maximum Propagation Delay, Output Enable to Output Y
(Figures 2 and 4)
30
34
38
ns
tTLH,
tTHL
Maximum Output Transition Time, Any Output
(Figures 1 and 3)
12
15
18
ns
Cin Maximum Input Capacitance
10
10
10
pF
Cout Maximum 3−State Output Capacitance (Output in High Impedance State)
15
15
15
pF
NOTE: For propagation delays with loads other than 50 pF, and information on typical parametric values, see Chapter 2 of the ON
Semiconductor High−Speed CMOS Data Book (DL129/D).
Typical @ 25°C, VCC = 5.0 V
CPD Power Dissipation Capacitance (Per Buffer)*
55
pF
* Used to determine the no−load dynamic power consumption: PD = CPD VCC2f + ICC VCC. For load considerations, see Chapter 2 of the
ON Semiconductor High−Speed CMOS Data Book (DL129/D).
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