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MC74HCT541A_06 Datasheet, PDF (2/8 Pages) ON Semiconductor – Octal 3−State Non−Inverting Buffer/Line Driver/ Line Receiver With LSTTL−Compatible Inputs
MC74HCT541A
PINOUT: 20−LEAD PACKAGES
VCC OE2 Y1 Y2 Y3 Y4 Y5 Y6 Y7 Y8
20 19 18 17 16 15 14 13 12 11
1 2 3 4 5 6 7 8 9 10
OE1 A1 A2 A3 A4 A5 A6 A7 A8 GND
(Top View)
FUNCTION TABLE
Inputs
OE1 OE2 A
Output Y
L
L
L
L
L
L
H
H
HXX
Z
XHX
Z
Z = High Impedance
X = Don’t Care
MAXIMUM RATINGS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Symbol
Parameter
Value
Unit
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ VCC DC Supply Voltage (Referenced to GND)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Vin DC Input Voltage (Referenced to GND)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Vout DC Output Voltage (Referenced to GND)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Iin
DC Input Current, per Pin
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Iout DC Output Current, per Pin
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ICC DC Supply Current, VCC and GND Pins
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ PD Power Dissipation in Still Air Plastic DIP†
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ SOIC Package†
– 0.5 to + 7.0
V
– 0.5 to VCC + 0.5 V
– 0.5 to VCC + 0.5 V
± 20
mA
± 35
mA
± 75
mA
750
mW
500
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Tstg Storage Temperature Range
– 65 to + 150
_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ TL
Lead Temperature, 1 mm from Case for 10 Seconds
260
_C
Plastic DIP or SOIC Package
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ratings only. Functional operation above the Recommended Operating Conditions is not implied.
This device contains protection
circuitry to guard against damage due
to high static voltages or electric
fields. However, precautions must be
taken to avoid applications of any
voltage higher than maximum rated
voltages to this high−impedance
circuit. For proper operation, Vin and
Vout should be constrained to the
range GND v (Vin or Vout) v VCC.
Unused inputs must always be tied
to an appropriate logic voltage level
(e.g., either GND or VCC). Unused
outputs must be left open.
Extended exposure to stresses above the Recommended Operating Conditions may affect device
reliability.
†Derating — Plastic DIP: – 10 mW/_C from 65_ to 125_C
SOIC Package: – 7 mW/_C from 65_ to 125_C
For high frequency or heavy load considerations, see Chapter 2 of the ON Semiconductor High−Speed CMOS Data Book (DL129/D).
RECOMMENDED OPERATING CONDITIONS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Symbol
Parameter
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ VCC
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Vin, Vout
DC Supply Voltage (Referenced to GND)
DC Input Voltage, Output Voltage
(Referenced to GND)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ TA
Operating Temperature Range, All Package Types
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ tr, tf Input Rise/Fall Time (Figure 1)
Min
Max Unit
4.5
5.5
V
0
VCC
V
– 55 + 125 _C
0
500
ns
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