MC74HCT241A Datasheet, PDF (3/9 Pages) ON Semiconductor – Octal 3-State Noninverting Buffer/Line Driver/ Line Receiver with LSTTL-Compatible Inputs

MC74HCT241A
MAXIMUM RATINGS*
Symbol
Parameter
Value
Unit
V_CC DC Supply Voltage (Referenced to GND)
– 0.5 to + 7.0
V
V_in DC Input Voltage (Referenced to GND)
– 0.5 to V_CC + 0.5 V
V_out DC Output Voltage (Referenced to GND)
– 0.5 to V_CC + 0.5 V
I_in
DC Input Current, per Pin
± 20
mA
I_out DC Output Current, per Pin
± 35
mA
I_CC DC Supply Current, V_CC and GND Pins
± 75
mA
P_D Power Dissipation in Still Air, Plastic or Ceramic DIP†
750
mW
SOIC Package†
500
T_stg Storage Temperature
– 65 to + 150
_C
T_L Lead Temperature, 1 mm from Case for 10 Seconds
_C
(Plastic DIP or SOIC Package)
260
(Ceramic DIP)
300
This device contains protection
circuitry to guard against damage
due to high static voltages or electric
fields. However, precautions must
be taken to avoid applications of any
voltage higher than maximum rated
voltages to this high−impedance cir-
cuit. For proper operation, V_in and
V_out should be constrained to the
range GND v (V_in or V_out) v V_CC.
Unused inputs must always be
tied to an appropriate logic voltage
level (e.g., either GND or V_CC).
Unused outputs must be left open.
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress
ratings only. Functional operation above the Recommended Operating Conditions is not implied.
Extended exposure to stresses above the Recommended Operating Conditions may affect device
reliability.
†Derating — Plastic DIP: – 10 mW/_C from 65_ to 125_C
Ceramic DIP: – 10 mW/_C from 100_ to 125_C
SOIC Package: – 7 mW/_C from 65_ to 125_C
RECOMMENDED OPERATING CONDITIONS
Symbol
Parameter
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{VCC DC Supply Voltage (Referenced to GND)}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Vin, Vout DC Input Voltage, Output Voltage (Referenced to GND)}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _TA
Operating Temperature, All Package Types
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{tr, tf}
Input Rise and Fall Time (Figure 1)
Min Max Unit
4.5 5.5 V
0
V_CC
V
– 55 + 125 _C
0 500 ns
DC ELECTRICAL CHARACTERISTICS (Voltages Referenced to GND)
Guaranteed Limit
Symbol
Parameter
Test Conditions
V_CC
– 55 to
V
25_C v 85_C v 125_C _Unit
V_IH
Minimum High−Level Input
Voltage
V_out = 0.1 V or V_CC – 0.1 V
|I_out| v 20 μA
4.5
2
2
2
V
5.5
2
2
2
V_IL
Maximum Low−Level Input
Voltage
V_out = 0.1 V or V_CC – 0.1 V
|I_out| v 20 μA
4.5
0.8
0.8
08
V
5.5
0.8
0.8
0.8
V_OH
Minimum High−Level Output
Voltage
V_in = V_IH or V_IL
|I_out| v 20 μA
4.5
4.4
4.4
4.4
V
5.5
5.4
5.4
5.4
V_in = V_IH or V_IL
|I_out| v 6 mA
4.5
3.98
3.84
3.7
V_OL
Maximum Low−Level Output
Voltage
V_in = V_IH or V_IL
|I_out| v 20 μA
4.5
0.1
0.1
0.1
V
5.5
0.1
0.1
0.1
V_in = V_IH or V_IL
|I_out| v 6 mA
4.5
0.26
0.33
0.4
I_in
Maximum Input Leakage Current V_in = V_CC or GND
5.5
± 0.1
± 1.0
± 1.0
μA
I_OZ
Maximum Three−State
Leakage Current
Output in High−Impedance State
5.5
± 0.5
± 5.0
± 10
μA
V_in = V_IL or V_IH
V_out = V_CC or GND
I_CC
Maximum Quiescent Supply
Current (per Package)
V_in = V_CC or GND
I_out = 0 μA
5.5
4
40
160
μA
ΔI_CC Additional Quiescent Supply
V_in = 2.4 V, Any One Input
Current
V_in = V_CC or GND, Other Inputs
l_out = 0 μA
5.5
1. Total Supply Current = I_CC + ΣΔI_CC.
≥ −55_C
2.9
25_C to 125_C
2.4
mA
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